N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
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Journal ArticleDOI
Heteroepitaxial growth of InAs on Si: A new type of quantum dot
G. E. Cyrlin,V. N. Petrov,Vladimir G. Dubrovskii,Yu. B. Samsonenko,N. K. Polyakov,Alexander Golubok,S. A. Masalov,N. I. Komyak,V. M. Ustinov,A. Yu. Egorov,A. R. Kovsh,Mikhail V. Maximov,A. F. Tsatsul’nikov,B. V. Volovik,A. E. Zhukov,P. S. Kop’ev,Nikolai N. Ledentsov,Zh. I. Alferov,Dieter Bimberg +18 more
TL;DR: In this article, the mechanism for heteroepitaxial growth in the InAs/Si system was studied by reflection highenergy electron diffraction, scanning tunnelling microscopy, and photoluminescence.
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Composition analysis of coherent nanoinsertions of solid solutions on the basis of high-resolution electron micrographs
TL;DR: In this article, a program package is presented, ensuring fast direct and inverse Fourier transformations of images, various methods of noise filtration and use of spectral windows, and determination of local interplanar spacings (LIS) from cross-sectional high-resolution electron micrographs.
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Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm
A. E. Zhukov,A. Yu. Egorov,A. R. Kovsh,V. M. Ustinov,Sergey V. Zaitsev,N. Yu. Gordeev,V. I. Kopchatov,A. V. Lunev,A. F. Tsatsul’nikov,B. V. Volovik,Nikolai N. Ledentsov,P. S. Kop’ev +11 more
TL;DR: In this article, the active region of an injection laser was employed as the active area of an InGaAs matrix grown on an InP substrate by molecular-beam epitaxy, and it was observed that the radiation wavelength was equal to 1.894 µm (77 K).
Journal ArticleDOI
Specifics of MOCVD Formation of In x Ga 1 - x N Inclusions in a GaN Matrix
I. P. Soshnikov,V. V. Lundin,A. S. Usikov,I. P. Kalmykova,Nikolai N. Ledentsov,Andreas Rosenauer,B. Neubauer,Dagmar Gerthsen +7 more
TL;DR: In this article, the content of indium in nanodomains, determined by the DALI method, is as high as x≈0.6 or more, substantially exceeding the average In concentration.
Journal ArticleDOI
Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties
G. E. Cirlin,N. K. Polyakov,V. N. Petrov,V. A. Egorov,D. V. Denisov,B. V. Volovik,V. M. Ustinov,Zh. I. Alferov,Nikolai N. Ledentsov,Nikolai N. Ledentsov,R. Heitz,Dieter Bimberg,Nikolai Zakharov,Peter Werner,U. Gösele +14 more
TL;DR: In this article, the growth and properties of InAs nanoscale islands formed on silicon are reported, showing that upon annealing at increased substrate temperature, extensive interdiffusion leads to the formation of an InAs solid solution in the Si cap layer.