N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
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Journal ArticleDOI
Ordered quantum-dot arrays in semiconducting matrices
Nikolai N. Ledentsov,V. M. Ustinov,Sergei Ivanov,B. Ya. Meltser,M. V. Maksimov,Petr S. Kop'ev,Dieter Bimberg,Zhores I. Alferov +7 more
Journal ArticleDOI
A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate
S. S. Mikhrin,A. E. Zhukov,A. R. Kovsh,Nikolai A. Maleev,V. M. Ustinov,Yu. M. Shernyakov,I. N. Kayander,E.Yu. Kondrat'eva,D. A. Livshits,I. S. Tarasov,M. V. Maksimov,A. F. Tsatsul’nikov,Nikolai N. Ledentsov,P. S. Kop’ev,Dieter Bimberg,Zh. I. Alferov +15 more
TL;DR: Spatially singlemode lasing in the wavelength range of 125-128 µm was accomplished in injection lasers on GaAs substrates as discussed by the authors.The peak output power was 110 mW at room temperature, and the differential quantum efficiency amounts to 37%
Journal ArticleDOI
Electronic properties of semiconductor quantum-wire structures directly grown on (311) surfaces
TL;DR: In this paper, a new method to directly synthesize GaAs quantum-well-wire (QWW) structures by molecular beam epitaxy was developed, based on the in-situ formation of a periodic array of nanometer scale macrosteps or facets by breaking up a surface with high surface energy into facets corresponding to planes with lower energy.
Journal ArticleDOI
Si/Ge nanostructures for optoelectronics applications
V. A. Egorov,G. E. Cirlin,Alexander A. Tonkikh,Vadim Talalaev,A. G. Makarov,Nikolai N. Ledentsov,V. M. Ustinov,Nikolai Zakharov,Peter Werner +8 more
TL;DR: In this article, the optical and structural properties of multilayer Si/Ge structures with precritical, as well as close-to-critical, germanium inclusions in a silicon matrix, for which the transition from the two-dimensional to island growth occurs, were studied.
Proceedings ArticleDOI
Close to 100 Gbps discrete multitone transmission over 100m of multimode fiber using a single transverse mode 850nm VCSEL
Bo Wu,Xian Zhou,Yanan Ma,Jun Luo,Kangping Zhong,Shaofeng Qiu,Zhiyong Feng,Yazhi Luo,M. Agustin,Nikolai N. Ledentsov,Joerg Kropp,Vitaly Shchukin,Nikolay N. Ledentsov,Iain Eddie,Lu Chao +14 more
TL;DR: In this article, the authors studied the performance of discrete multitone transmission (DMT) transmission over standard multimode fiber (MMF) using high-speed single (SM) and multimode (MM) Vertical-Cavity Surface-Emitting Lasers (VCSELs) in the range of 72Gbps to 82Gbps over 300m -100m distances of OM4 fiber.