N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
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Journal ArticleDOI
Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure
M. V. Maksimov,A. V. Sakharov,V. V. Lundin,A. S. Usikov,B. V. Pushnyi,I. L. Krestnikov,Nikolai N. Ledentsov,P. S. Kop’ev,Zh. I. Alferov,V. P. Rozum +9 more
TL;DR: In this paper, the luminescence properties of a GaN/Al 0.1Ga0.9N double heterostructure grown by vapor-phase deposition from organometallic compounds are studied.
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Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots
D. S. Sizov,E. E. Zavarin,Nikolai N. Ledentsov,V. V. Lundin,Yu. G. Musikhin,V. S. Sizov,Robert A. Suris,A. F. Tsatsul’nikov +7 more
TL;DR: In this article, the effect of nonequilibrium population on the luminescent properties of ensembles of quantum dots with various energies of activation from the ground-state level to the continuous-spectrum region was studied theoretically and experimentally with the InGaN quantum dots as an example.
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Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement
I. L. Krestnikov,Nikolai N. Ledentsov,M. V. Maksimov,A. V. Sakharov,Sergei Ivanov,S. V. Sorokin,L. N. Tenishev,P. S. Kop’ev,Zh. I. Alferov +8 more
TL;DR: In this paper, it was shown that in order to achieve lasing in structures with CdSe submonolayers inserted in a ZnSe matrix, no additional optical confinement of the active region using thick wide gap layers is required.
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Design Considerations for Single-Mode Vertical-Cavity Surface-Emitting Lasers With Impurity-Induced Intermixing
TL;DR: In this article, the authors show that Zn-induced intermixing results in a high efficiency of the leakage of the VCSEL aperture-confined modes into the surrounding intermixed area.
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Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructures
TL;DR: In this paper, the results of studies of hole energy states in vertically coupled quantum dots in InAs-GaAs p-n heterostructures by deep-level transient spectroscopy are reported.