N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
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Quantum dot laser
TL;DR: In this article, the most advanced and well-understood results are obtained for lasers based on Stranski-Krastanow InGaAs-GaAs three-dimensional QDs; even significant progress in the understanding of basic lasing properties is also achieved for QDs made of II-VI materials and 'native' QDs formed by nanoscale alloy phase separation in the InGaN-AlGaN material system.
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InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T 0= 385 K) Grown by Metal Organic Chemical Vapour Deposition
Mikhail V. Maximov,I. V. Kochnev,Yuri M. Shernyakov,Sergei V. Zaitsev,Nikita Yu. Gordeev,Andrew F. Tsatsul'nikov,A. V. Sakharov,Igor Krestnikov,Petr S. Kop'ev,Zhores I. Alferov,Nikolai N. Ledentsov,Dieter Bimberg,A. O. Kosogov,Peter Werner,Ulrich Gösele +14 more
TL;DR: In this paper, the authors show that the properties of QD laser can be strongly improved if the QDs are confined by Al0.3Ga0.7As barriers and the cladding layers are grown at high temperature.
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On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers
Alexander V. Uskov,Eoin P. O'Reilly,Robert J. Manning,R.P. Webb,D. Cotter,M. Laemmlin,Nikolai N. Ledentsov,Dieter Bimberg +7 more
TL;DR: In this article, it was shown that interferometers containing quantum-dot semiconductor optical amplifiers can be effective for ultrafast cross-phase modulation and digital signal processing with low dependence on the specific random data pattern.
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1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
V. M. Ustinov,A. E. Zhukov,Nikolai A. Maleev,A. R. Kovsh,S. S. Mikhrin,B. V. Volovik,Yu. G. Musikhin,Yu. M. Shernyakov,Mikhail V. Maximov,A. F. Tsatsul’nikov,Nikolai N. Ledentsov,Zh. I. Alferov,James A. Lott,Dieter Bimberg +13 more
TL;DR: In this article, a 1.3-μm vertical cavity surface emitting laser was successfully fabricated from the structures with three QD planes inserted into the optical microcavity with AlO-GaAs Bragg reflectors.
Journal ArticleDOI
InAs‐GaAs quantum dots: From growth to lasers
Dieter Bimberg,Nikolai N. Ledentsov,Marius Grundmann,N. Kirstaedter,Oliver G. Schmidt,Ming-Hua Mao,V. M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,Zh. I. Alferov,S. S. Ruvimov,Ulrich Gösele,J. Heydenreich +13 more
TL;DR: In this paper, the first injection laser based on InAs-GaAs and InGaAs-GAAs quantum pyramids with a lateral size ranging from 80 to 140 A is realized.