N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
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Journal ArticleDOI
Electroluminescent studies of emission characteristics of InGaAsN/GaAs injection lasers in a wide temperature range
L. Ya. Karachinsky,N. Yu. Gordeev,Innokenty I. Novikov,Mikhail V. Maximov,A. R. Kovsh,A. R. Kovsh,Jyh-Shyang Wang,R. S. Hsiao,J. Y. Chi,V. M. Ustinov,Nikolai N. Ledentsov,Nikolai N. Ledentsov +11 more
TL;DR: In this article, light-current, spectral, and far-field characteristics of InGaAsN injection lasers on GaAs substrates were studied in a wide temperature range (77-300 K) at various driving current densities.
Journal ArticleDOI
Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions
TL;DR: In this article, a method for analyzing the experimental rocking curves of multilayer structures in terms of the Parratt-Speriosu model is developed, which permits one to determine the thickness, period, and average composition of InxGa1 − xN/GaN layers, as well as the deformation of the active region in the samples under study.
Journal ArticleDOI
Digital Non-Linear Transmitter Equalization for PAM-N-Based VCSEL Links Enabling Robust Data Transmission of 100 Gbit/s and Beyond
TL;DR: In this paper , a digital non-linear transmit equalizer is proposed to overcome voltage-dependent relaxation frequency shifts as well as data-dependent VCSEL bandwidth variations, which reveals a BER improvement of more than 30-fold compared to a linear FFE at a data rate of 80 Gbit/s.
Journal ArticleDOI
The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
A. G. Kuzmenkov,S. A. Blokhin,Nikolai A. Maleev,A. V. Sakharov,V. G. Tikhomirov,M. V. Maksimov,V. M. Ustinov,A. R. Kovsh,S. S. Mikhrin,Nikolai N. Ledentsov,Nikolai N. Ledentsov,H. P. Yang,Gray Lin,R. S. Hsiao,Jim-Yong Chi +14 more
TL;DR: In this paper, a spatially ordered array of etched holes in the upper distributed Bragg reflector was used to suppress the generation of high-order modes in vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots.
Proceedings ArticleDOI
Ground and excited state lasing near 1.3-/spl mu/m from self-assembled quantum dots on GaAs substrates
A. E. Zhukov,A. R. Kovsh,S. S. Mikhrin,Nikolai A. Maleev,V. M. Ustinov,B. V. Volovik,Mikhail V. Maximov,A. F. Tsatsul’nikov,E.Yu. Kondrat'eva,Yu. M. Shernyakov,Nikolai N. Ledentsov,P. S. Kop’ev,Zh. I. Alferov,Dieter Bimberg +13 more
TL;DR: In this article, the authors studied the room temperature characteristics of the broad area (200 /spl mu/m) diode lasers based on triple-stacked InAs QDs covered with 5.5 nm In/sub 0.13/Ga/ sub 0.87/As QW.