N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
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Journal ArticleDOI
Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers
A. R. Kovsh,A. E. Zhukov,A. Yu. Egorov,V. M. Ustinov,Yu. M. Shernyakov,Mikhail V. Maximov,V.V Volovik,A. F. Tsatsul’nikov,Yu.V Musikhin,Nikolai N. Ledentsov,P. S. Kop’ev,Dieter Bimberg,Zh. I. Alferov +12 more
TL;DR: In this article, an array of (In,Al)As QDs demonstrating considerably higher density than Al-free QDs as nucleation centers for the injection laser formation was used.
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An intermediate (1.0–1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy
G. M. Gur'yanov,G. E. Cirlin,Alexander Golubok,S.Ya. Tipissev,Nikolai N. Ledentsov,Vitaly Shchukin,Marius Grundmann,Dieter Bimberg,Zh. I. Alferov +8 more
TL;DR: In this paper, an intermediate stage of InAs deposition on the GaAs(100) singular and vicinal (3° towards [011] direction) surfaces results in the formation of different InAs surface arrangements.
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Fabrication of InAs quantum dots on silicon
G. E. Cirlin,G. E. Cirlin,V. N. Petrov,V. N. Petrov,Vladimir G. Dubrovskii,Vladimir G. Dubrovskii,S. A. Masalov,S. A. Masalov,Alexander Golubok,Alexander Golubok,N. I. Komyak,N. I. Komyak,Nikolai N. Ledentsov,Nikolai N. Ledentsov,Zh. I. Alferov,Zh. I. Alferov,Dieter Bimberg,Dieter Bimberg +17 more
TL;DR: In this article, the Stranski-Krastanow mechanism was used to grow InAs/Si quantum dots on Si(100) by molecular beam epitaxy, and it was shown that the surface morphology depends strongly on the substrate temperature.
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Wafer-fused 1300 nm VCSELs with an active region based on superlattice
Sergey A. Blokhin,A. V. Babichev,A. G. Gladyshev,Leonid Ya. Karachinsky,Innokenty I. Novikov,Alexey Blokhin,S. S. Rochas,Dmitrii Denisov,K. O. Voropaev,A. S. Ionov,Nikolai N. Ledentsov,Anton Yu. Egorov +11 more
Journal ArticleDOI
Three-dimensional arrays of self-ordered quantum dots for laser applications
Nikolai N. Ledentsov,N. Kirstaedter,Marius Grundmann,Dieter Bimberg,V.M. Ustinov,I.V. Kochnev,P. S. Kop’ev,Zh. I. Alferov +7 more
TL;DR: In this paper, the authors used self-ordering phenomena on crystal surfaces for the formation of QDs with properties satisfying device requirements on QD size, shape, uniformity and density.