Z
Zhifeng Ren
Researcher at Texas Center for Superconductivity
Publications - 726
Citations - 84970
Zhifeng Ren is an academic researcher from Texas Center for Superconductivity. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 122, co-authored 695 publications receiving 71212 citations. Previous affiliations of Zhifeng Ren include Massachusetts Institute of Technology & University of Cincinnati.
Papers
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Field emission of silicon nanowires
TL;DR: In this paper, the field emission of single crystal silicon nanowires of 100nm in diameter grown at 480°C from silane using Au as catalyst has been investigated, and an emission current density of 1mA∕cm2 over a 0.2cm2 area was obtained at an electric field of 3.4V∕μm with a turn-on field of 2V∆μm at 0.01mA∆cm2.
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N-type Mg3Sb2-xBix with improved thermal stability for thermoelectric power generation
Hongjing Shang,Hongjing Shang,Zhongxin Liang,Congcong Xu,Shaowei Song,Daxing Huang,Hongwei Gu,Jun Mao,Zhifeng Ren,Fazhu Ding +9 more
TL;DR: In this article, the thermal stability of n-type Mg3Sb2-xBix alloys with high thermoelectric performance was studied via in situ measurements of their thermoelection properties at different temperatures, along with microstructural and composition characterizations.
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Thermoelectric property enhancement in Yb-doped n-type skutterudites YbxCo4Sb12
TL;DR: In this article, the authors present a study on the dimensionless thermoelectric figure-of-merit (ZT) of nanostructured Yb x Co 4 Sb 12 ( x ǫ = 0.45) made by hot pressing the nanopowder obtained from ball milling an ingot.
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Periodicity and alignment of large-scale carbon nanotubes arrays
TL;DR: In this article, the periodicity and alignment of large-scale periodic arrays of carbon nanotubes (CNTs) using plasma-enhanced chemical vapor deposition was studied.
Patent
Apparatus and methods for solar energy conversion using nanocoax structures
TL;DR: An apparatus and method for solar conversion using nanocoax structures are described in this paper, where a plurality of nano-coaxial structures comprising an internal conductor (120) surrounded by a semiconducting material (180) coated with an outer conductor (160), and a protruding portion (110) of the internal conductor extending beyond a surface of the film (140) are presented.