Z
Zhifeng Ren
Researcher at Texas Center for Superconductivity
Publications - 726
Citations - 84970
Zhifeng Ren is an academic researcher from Texas Center for Superconductivity. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 122, co-authored 695 publications receiving 71212 citations. Previous affiliations of Zhifeng Ren include Massachusetts Institute of Technology & University of Cincinnati.
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Filling fraction of Yb in CoSb3 Skutterudite studied by electron microscopy
TL;DR: In this paper, the lattice distortion was observed in annealed Yb-filled CoSb3 Skutterudites and the results indicated that lattice distortions appeared when the Yb filling fraction reached a certain critical value.
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Thermoelectric properties of Ho-doped Bi0.88Sb0.12
TL;DR: In this paper, the Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization were reported for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels.
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Substitution of Antimony by Tin and Tellurium in n -Type Skutterudites CoSb 2.8 Sn x Te 0.2−x
Tulashi Dahal,Yucheng Lan,Qing Jie,Weishu Liu,Keshab Dahal,Lu Tang,Chuan Fei Guo,Zhifeng Ren +7 more
TL;DR: In this article, the substitution of antimony by tin and tellurium in n-type skutterudites CoSb2 has been studied and shown to suppress the thermal conductivity.
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Topological Effect of Surface Plasmon Excitation in Gapped Isotropic Topological Insulator Nanowires
Mingda Li,Wenping Cui,Wenping Cui,Lijun Wu,Qingping Meng,Yimei Zhu,Yong Zhang,Weishu Liu,Zhifeng Ren +8 more
TL;DR: In this paper, the surface plasmon (SP) at the interface between topologically non-trivial cylindrical core and topological-to-topological surrounding material, from the axion electrodynamics and modified constitutive relations, is investigated.
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Growth of aligned carbon nanotubes on ALD-Al2O3 coated silicon and quartz substrates
TL;DR: In this article, the authors developed new catalyst recipes for successful growth of vertically aligned CNTs on ALD-Al2O3 coated silicon and quartz substrates, achieving lengths of 90 and 180 cm on silicon and 90 cm on quartz, respectively.