Indian Institute of Technology, Jodhpur

About: Indian Institute of Technology, Jodhpur is a education organization based out in Jodhpur, India. It is known for research contribution in the topics: Computer science & Welding. The organization has 914 authors who have published 2221 publications receiving 19243 citations.

Polyphenolic flavonoid (Myricetin) upregulated proteasomal degradation mechanisms: Eliminates neurodegenerative proteins aggregation.

Abstract: Major neurodegenerative disorders are characterized by the formation of misfolded proteins aggregates inside or outside the neuronal cells. Previous studies suggest that aberrant proteins aggregates play a critical role in protein homeostasis imbalance and failure of protein quality control (PQC) mechanism, leading to disease conditions. However, we still do not understand the precise mechanisms of PQC failure and cellular dysfunctions associated with neurodegenerative diseases caused by the accumulation of protein aggregates. Here, we show that Myricetin, a flavonoid, can eliminate various abnormal proteins from the cellular environment via modulating endogenous levels of Hsp70 chaperone and quality control (QC)-E3 ubiquitin ligase E6-AP. We have observed that Myricetin treatment suppresses the aggregation of different aberrant proteins. Myricetin also enhances the elimination of various toxic neurodegenerative diseases associated proteins from the cells, which could be reversed by the addition of putative proteasome inhibitor (MG132). Remarkably, Myricetin can also stabilize E6-AP and reduce the misfolded proteins inclusions, which further alleviates cytotoxicity. Taken together these findings suggested that new mechanistic and therapeutic insights based on small molecules mediated regulation of disturbed protein quality control mechanism, which may result in the maintenance of the state of proteostasis.

Operational Performance and Degradation Influenced Life Cycle Environmental–Economic Metrics of mc-Si, a-Si and HIT Photovoltaic Arrays in Hot Semi-arid Climates

Abstract: Life cycle metrics evolution specific to the climate zone of photovoltaic (PV) operation would give detailed insights on the environmental and economic performance. At present, vast literature is available on the PV life cycle metrics where only the output energies ignoring the degradation rate (DR) influence. In this study, the environ-economic analysis of three PV technologies, namely, multi-crystalline silicon (mc-Si), amorphous silicon (a-Si) and hetero-junction with an intrinsic thin layer (HIT) have been carried out in identical environmental conditions. The energy performance parameters and the DR rate of three PV technologies are evaluated based on the monitored real time data from the installation site in hot semi-arid climates. The assessment demonstrates that the HIT PV module technology exhibits more suitable results compared to mc-Si and a-Si PV systems in hot semi-arid climatic conditions of India. Moreover, energy metrices which includes energy payback time (EPBT), energy production factor (EPF) and life cycle conversion efficiency (LCCE) of the HIT technologies are found to be 1.0, 24.93 and 0.15 years, respectively. HIT PV system has higher potential to mitigate the CO2 and carbon credit earned compared to mc-Si and a-Si PV system under hot semi-arid climate. However, the annualized uniform cost (UAC) for mc-Si (3.60 Rs/kWh) and a-Si (3.40 Rs/kWh) are more admissible in relation to the HIT (6.63 Rs/kWh) PV module type. We conclude that the approach of considering DR influenced life cycle metrics over the traditional approach can support to identify suitable locations for specific PV technology.

Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

Abstract: A sensor for highly sensitive, selective, and rapid determination of the trace amount of toxic Hg2+ ions is developed for the first-time using molybdenum disulfide (MoS2) functionalized AlGaN/GaN high electron mobility transistor (HEMT). The vertically aligned, flower-like MoS2 structures are synthesized through a simple hydrothermal route and applied on the gate region of AlGaN/GaN HEMT. The scanning electron microscopy, Raman spectroscopy, and X-ray diffraction are performed for structural characterization of MoS2. Further, the sensing of Hg2+ ions is performed by electrical characterizations of MoS2 functionalized AlGaN/GaN HEMT. The sensor showed an excellent sensitivity of 0.64 μA/ppb and detection limit of 0.01152 ppb with the rapid response time of 1.8 s. The sensor exhibits the linear range of detection from 0.1 ppb to 100 ppb and highly selective behavior towards Hg2+ ions. The results demonstrated that the MoS2 possess excellent Hg2+ ions capture property, that could be attributed to the complexation of Hg2+ ions with sulfur and the electrostatic interaction between MoS2 and Hg2+ ions alters the drain to source current (IDS) of the HEMT at a constant drain to source voltage (VDS). Therefore, the MoS2 based AlGaN/ GaN HEMT devices have a huge potential for next-generation ion sensing applications.

Non-Markovian dephasing and depolarizing channels

Abstract: We introduce a method to construct non-Markovian variants of completely positive (CP) dynamical maps, particularly, qubit Pauli channels. We identify non-Markovianity with the breakdown in CP divisibility of the map, i.e., appearance of a not-completely positive intermediate map. In particular, we consider the case of non-Markovian dephasing in detail. The eigenvalues of the Choi matrix of the intermediate map crossover at a point which corresponds to a singularity in the canonical decoherence rate of the corresponding master equation and thus to a momentary noninvertibility of the map. Thereafter, the rate becomes negative, indicating non-Markovianity. We quantify the non-Markovianity by two methods, one based on CP divisibility [Hall et al., Phys. Rev. A 89, 042120 (2014)], which does not require optimization but requires normalization to handle the singularity, and another method, based on distinguishability [Breuer et al. Phys. Rev. Lett. 103, 210401 (2009)], which requires optimization but is insensitive to the singularity.