Matra

About: Matra is a based out in . It is known for research contribution in the topics: Signal & Detector. The organization has 1330 authors who have published 1216 publications receiving 17967 citations.

Monitoring system for a complex system, especially for an aircraft

Abstract: The complex system monitoring has the central processor (3) loaded with a data base that can be updated and can carry complementary data associated with at least some of this monitoring information. Before transmitting monitoring information to the display (4), the central processor confirms that the data base has the information complementary to the monitoring information to be transmitted, and if it does the central processor signals the existence of the information, and the confirmation is displayed on the display panel.

A 30 MHz-18 GHz fully automated far-field antenna measurement system

Abstract: The authors describe the operation and performance of a fully automated system which measures far-field phase and amplitude of an antenna in the frequency range from 30 MHz to 18 GHz and then computes and displays far-field antenna patterns and related data. The characterization of an antenna with linear or circular polarization can be obtained for the antenna alone or in presence of a specific structure. A system description and operation of several configurations of measurement are given by focusing on the control computing system used for antenna measurement. Typical results of telemetry antennas measured on scales are presented. >

SiC telescope demonstrator (mirrors and structure): optomechanical performances

Abstract: Matra Marconi Space (MMS) has designed, built, aligned and tested a 200-mm bi-telescope demonstrator, which both structure and mirrors have been manufactured with silicon carbide. Thanks to the unique properties of sintered silicon carbide developed by C and C, the measured performance of our demonstration show the great interest of such approach for space optics applications. This paper describes the main innovative points and performance which have been drawn up during demonstrator development: (i) a very few number of pieces, thanks to an innovative architecture and a very simple mirror attachment concept, made our concept cost effective; (ii) a high optical quality of primary mirror telescope; (iii) a huge optical stability over large environmental constraints, either after mechanical stress or thermal stress; (iv) design compatible with a serial production.

Method of speech recognition with learning

Abstract: In the recognition phase, the signal originating from a sensor is processed to obtain parameters which are compared with those stored in a dictionary in the learning phases so as to recognize the voice structures uttered by the user in a noisy environment. The obtaining of the said parameters during the learning and recognition phases includes the formation of digital frames of predetermined length from the signal originating from the sensor, the transformation of each frame from the time domain to the frequency domain to obtain a spectrum X(i), and the application of an inverse transformation, from the frequency domain to the time domain, to the magnitude |X(i)|.sup.γ, where |X(i)| represents the modulus of the spectrum and γ represents an appropriate exponent.

Non-uniformité de la distribution spatiale des états de surface dans le canal des transistors CMOS

Abstract: Nous avons montre que les densites moyennes d'etats d'interface obtenues par la technique de pompage de charge peuvent conduire a une surestimation du nombre reel de ces defauts en milieu de canal des transistors MOS, lorsque l'on suppose qu'ils sont uniformement distribues sur toute l'etendue de l'interface Si-SiO2. Les densites d'etats de surface peuvent etre plus elevees pres de la source et du drain, meme lorsque le transistor MOS n'a pas ete soumis a une contrainte de vieillissement. Nous suggerons que cette augmentation est due aux dommages inevitablement produits au cours de certaines etapes du procede d'elaboration des transistors et en particulier lors de la gravure plasma de l'electrode de grille. Les densites locales des etats de surface doivent alors necessairement etre prises en compte, lors des etudes de vieillissement sur de tels composants. Nous proposons une nouvelle methode de calcul permettant d'acceder, a partir des mesures en pompage de charge, a la densite d'etats d'interface a proximite de la source et du drain avant et apres injection de porteurs chauds.