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Journal ArticleDOI
The High-k Solution
TL;DR: The Intel Core 2 microprocessors, based on the latest 45-nanometer CMOS process technology, have more transistors and run faster and cooler than the previous, 65-nm process generation as discussed by the authors.
Journal ArticleDOI
Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories.
Xiaohui Tang,Christophe Krzeminski,Aurélien Lecavelier des Etangs-Levallois,Zhenkun Chen,Emmanuel Dubois,Erich Kasper,A. Karmous,Nicolas Reckinger,Denis Flandre,Laurent Francis,Jean-Pierre Colinge,Jean-Pierre Raskin +11 more
TL;DR: In this paper, a self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge), is presented. But the energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si.
Journal ArticleDOI
Verkehrsablauf auf Fernstraßen: Autofahren als Beispiel für nichtlineare Dynamik
TL;DR: In this article, a survey of verkehrstechnischen Modelle is presented, in which den Verkehrsablauf auf Fernstrasen in hydrodynamischen Kategorien is beschreiben.
Journal ArticleDOI
Future Material Systems : Requirements and Applications
TL;DR: In this article, requirements and applications for three different scenarios in material science of microelectronics are discussed and the strong links to economy are illustrated by a simple model of exponential growth.
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