Journal ArticleDOI
A 104- to 112.8-GHz CMOS Injection-Locked Frequency Divider
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TLDR
A high-frequency CMOS injection-locked frequency divider is presented by using the distributed LC, series inductor peaking, and multiple-injection techniques.Abstract:
A high-frequency CMOS injection-locked frequency divider (ILFD) is presented by using the distributed LC, series inductor peaking, and multiple-injection techniques. The theoretical analysis for the aforementioned techniques will be given. This ILFD has been fabricated in a 65-nm CMOS process. The core area is 0.4 mm times 0.36 mm without pads. The measured locking range is from 104 to 112.8 GHz, and its power consumption is 7.2 mW from a supply of 1.2 V.read more
Citations
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Journal ArticleDOI
Analysis and Design of a 2.9-mW 53.4–79.4-GHz Frequency-Tracking Injection-Locked Frequency Divider in 65-nm CMOS
Yue Chao,Howard C. Luong +1 more
TL;DR: A frequency-tracking technique is proposed to enhance the locking range of millimeter-wave injection-locked frequency dividers (ILFD) and an improved model is introduced for direct-injection ILFDs, based on which both the phase and gain conditions are analyzed and discussed.
Journal ArticleDOI
A 24 GHz Subharmonic Direct Conversion Receiver in 65 nm CMOS
TL;DR: A 24 GHz receiver, based on a subharmonic direct conversion architecture, designed in a 65 nm node, taking advantage of the half frequency operation proving significantly lower power consumption when compared to conventional solutions running at received frequency.
Journal ArticleDOI
Analysis and Design of D-Band Injection-Locked Frequency Dividers
Bo-Yu Lin,Shen-Iuan Liu +1 more
TL;DR: D-band (110-170 GHz) injection-locked frequency dividers (ILFDs) using the distributed-LC technique are presented and measurement results conform with the theoretical analysis.
Journal ArticleDOI
A 3.6 mW 125.7–131.9 GHz Divide-by-4 Injection-Locked Frequency Divider in 90 nm CMOS
TL;DR: In this paper, a divide-by-4 injection-locked frequency divider (ILFD) is realized in a 90 nm CMOS process, which has a measured locking range of 125.7-131.9 GHz.
Proceedings ArticleDOI
A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology
TL;DR: In this article, a single-ended divide-by-two injection-locked frequency divider with inductive feedback was presented, with a measured locking range of 126.9-141.5 GHz (14.7 GHz) with bias adjustment.
References
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Journal ArticleDOI
A study of injection locking and pulling in oscillators
TL;DR: In this paper, an identity obtained from phase and envelope equations is used to express the requisite oscillator nonlinearity and interpret phase noise reduction, and the behavior of phase-locked oscillators under injection pulling is also formulated.
Journal ArticleDOI
A 60-GHz CMOS receiver front-end
TL;DR: A receiver front-end is described that incorporates a folded microstrip geometry to create resonance at 60 GHz in a common-gate LNA and active mixers to provide voltage gain and noise figure in the unlicensed band around 60 GHz.
Journal ArticleDOI
165-GHz Transceiver in SiGe Technology
TL;DR: These results demonstrate for the first time the feasibility of SiGe BiCMOS technology for circuits in the 100-180-GHz range.
Proceedings ArticleDOI
A 16-to-18GHz 0.18-m Epi-CMOS Divide-by-3 Injection-Locked Frequency Divider
TL;DR: A new injection-locked frequency divider (ILFD) topology is proposed for divide-by-odd-number operation, which achieves 1 GHz locking range with 3.4dBm injection power, which increases to 3.2GHz with built-in tuning.
Proceedings ArticleDOI
40GHz Wide-Locking-Range Regenerative Frequency Divider and Low-Phase-Noise Balanced VCO in 0.18μm CMOS
Jun-Chau Chien,Liang-Hung Lu +1 more
TL;DR: A 40GHz wide-locking-range frequency divider and a low-phase-noise VCO are implemented in 0.18mum CMOS technology, demonstrating a locking range of 10.6GHz with 0dBm input power and phase noise of -108.65dBc/Hz at 1MHz offset.