Journal ArticleDOI
Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs
TLDR
In this paper, the authors developed analytical physically based models for the threshold voltage and sub-threshold swing of undoped symmetrical double-gate (DG) MOSFETs.Abstract:
We have developed analytical physically based models for the threshold voltage [including the drain-induced barrier lowering (DIBL) effect] and the subthreshold swing of undoped symmetrical double-gate (DG) MOSFETs The models are derived from an analytical solution of the 2-D Poisson equation in which the electron concentration was included The models for DIBL, subthreshold swing, and threshold voltage roll-off have been verified by comparison with 2-D numerical simulations for different values of channel length, channel thickness, and drain-source voltage; very good agreement with the numerical simulations has been observedread more
Citations
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Journal ArticleDOI
Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs
TL;DR: In this paper, a simple threshold voltage model of an undoped symmetrical double-gate MOSFET has been developed, based on an analytical solution of Poisson's equation for the potential distribution.
Journal ArticleDOI
Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor
TL;DR: In this paper, β-gallium oxide (β-Ga2O3) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-twodimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga 2O3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET.
Journal ArticleDOI
A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors
TL;DR: In this article, a 2D analytical model for the threshold voltage of fully depleted short-channel triple-material double-gate (DG) MOSFETs is presented, which is solved with suitable boundary conditions by applying the parabolic potential approximation.
Journal ArticleDOI
Modeling of Channel Potential and Subthreshold Slope of Symmetric Double-Gate Transistor
Biswajit Ray,Santanu Mahapatra +1 more
TL;DR: In this paper, a physically based continuous potential distribution model was proposed for a short-channel undoped body symmetrical double-gate transistor, which is valid from weak to strong inversion regimes and from the channel center to the surface.
Journal ArticleDOI
A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile
TL;DR: In this paper, a two-dimensional model for the threshold voltage of the short-channel double-gate MOSFETs with a vertical Gaussian-like doping profile is proposed.
References
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Journal ArticleDOI
Device scaling limits of Si MOSFETs and their application dependencies
TL;DR: The end result is that there is no single end point for scaling, but that instead there are many end points, each optimally adapted to its particular applications.
Journal ArticleDOI
Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
TL;DR: In this paper, a 1D analytic solution for symmetric and asymmetric double-gate MOSFETs was derived by incorporating only the mobile charge term in Poisson's equation.
Journal ArticleDOI
Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs
TL;DR: In this paper, a simple but powerful evanescent-mode analysis showed that the length /spl lambda/ over which the source and drain perturb the channel potential, is 1/spl pi/ of the effective device thickness in the double-gate case, and 1/4.810 of the cylindrical case, in excellent agreement with PADRE device simulations.
Journal ArticleDOI
An analytical solution to a double-gate MOSFET with undoped body
TL;DR: In this paper, a 1D analytical solution for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson's equation was derived, giving closed forms of band bending and volume inversion as a function of silicon thickness and gate voltage.
Journal ArticleDOI
A 2-D analytical solution for SCEs in DG MOSFETs
Xiaoping Liang,Yuan Taur +1 more
TL;DR: In this paper, a 2D analytical solution of electrostatic potential is derived for undoped (or lightly doped) double-gate (DG) MOSFETs in the sub-threshold region by solving Poissons equation in a 2-D boundary value problem.