Journal ArticleDOI
A Numerical Study on Graphene Nanoribbon Heterojunction Dual-Material Gate Tunnel FET
TLDR
In this paper, a tunnel FET (TFET) combining both graphene nanoribbon (GNR) heterojunction (HJ) and gate work function (WF) engineering is studied with the numerical simulation.Abstract:
In this letter, a tunnel FET (TFET) combining both graphene nanoribbon (GNR) heterojunction (HJ) and gate work function (WF) engineering is studied with the numerical simulation. The lowest subthreshold swing is smaller than 15 mV/decade and the ON state current ( $I_{{\mathrm{\scriptscriptstyle ON}}}$ ) reaches to $1.7~\mu \text{A}$ with device width smaller than 3 nm. The tunnel width is well reduced with the dual-material gate (DMG) structure boosting the ON current. The channel with a wide energy gap ( $E_{g}$ ) GNR can effectively reduce the leakage current at OFF state when its length is 13 nm. It is found out that large WF difference between the gate and the GNR not only effectively enhances the tunneling effect but also leads to an electron quantum well hindering the regulation capability of the gate. This effect can be well reduced with large WF gate material on the top of the HJ region. The numerical simulation reveals that the GNR HJ-DMG TFET is a good candidate for low power applications.read more
Citations
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Journal ArticleDOI
Recent Advances in Low-Dimensional Heterojunction-Based Tunnel Field Effect Transistors
Journal ArticleDOI
Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities.
TL;DR: In this review, state-of-art TFET devices exhibiting different semiconducting channels and geometries are comprehensively reviewed followed by a brief discussion of the challenges that remain for the development of high-performance devices.
Journal ArticleDOI
TFET on Selective Buried Oxide (SELBOX) Substrate with Improved I ON /I OFF Ratio and Reduced Ambipolar Current
TL;DR: In this paper, a new structure for tunnel field effect transistor on a selective buried oxide (SELBOX) substrate was proposed, and an extensive simulation study and a comparative performance analysis of the key characteristics of the proposed geometry of TFET on SELBOX substrate and the conventional fully depleted silicon-on-insulator (FDSOI) TFETs have been done.
Journal ArticleDOI
Improved performance of nanoscale junctionless carbon nanotube tunneling FETs using dual-material source gate design: A quantum simulation study
TL;DR: In this article, a dual-material source gate (DMSG) was proposed to enhance the performance of a junctionless carbon nanotube tunneling field effect transistor (JL CNTTFET) endowed with ultrascaled coaxial gate.
Journal ArticleDOI
Computational Study of p-n Carbon Nanotube Tunnel Field-Effect Transistor
TL;DR: In this paper, a gate-all-around (GAA) p-n carbon nanotube TFET (CNT-TFET) is proposed and compared with its conventional counterpart.
References
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Journal ArticleDOI
Energy Gaps in Graphene Nanoribbons
TL;DR: The authors' ab initio calculations show that the origin of energy gaps for GNRs with armchair shaped edges arises from both quantum confinement and the crucial effect of the edges, which differs from the results of simple tight-binding calculations or solutions of the Dirac's equation based on them.
Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
TL;DR: Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.
Journal ArticleDOI
Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor
TL;DR: In this paper, a dual material gate (DMG) was applied to a tunnel field effect transistor (TFET) to simultaneously optimize the on-current, the off-current and the threshold voltage.
Journal ArticleDOI
Low-Work-Function Surface Formed by Solution-Processed and Thermally Deposited Nanoscale Layers of Cesium Carbonate
Jinsong Huang,Zheng Xu,Yang Yang +2 more
TL;DR: In this article, a comprehensive study of the origin of the low work function of nanostructured layers of Cs2CO3 prepared by solution deposition and thermal evaporation is presented.
Journal ArticleDOI
Simulation of Graphene Nanoribbon Field-Effect Transistors
TL;DR: In this paper, an atomistic 3D simulation of graphene nanoribbon field effect transistors (GNR-FETs) is presented, based on the self consistent solution of the 3-D Poisson and Schrodinger equations with open boundary conditions within the nonequilibrium Green's function formalism and a tight binding Hamiltonian.
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