Journal ArticleDOI
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices
Boyi Zhang,Shuo Wang +1 more
TLDR
The literature on EMI research in power electronics systems with WBG devices is reviewed, and the EMI-related reliability issues are discussed, and solutions and guidelines are presented.Abstract:
Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due to their superior characteristics compared to their Si counterparts. However, their fast switching speed and the ability to operate at high frequencies brought new challenges, among which the electromagnetic interference (EMI) is one of the major concerns. Many works investigated the structures of WBG power devices and their switching performance. In some cases, the conductive or radiated EMI was measured. However, the EMI-related topics, including their influence on noise sources, noise propagation paths, EMI reduction techniques, and EMC reliability issues, have not yet been systematically summarized for WBG devices. In this article, the literature on EMI research in power electronics systems with WBG devices is reviewed. Characteristics of WBG devices as EMI noise sources are reviewed. EMI propagation paths, near-field coupling, and radiated EMI are surveyed. EMI reduction techniques are categorized and reviewed. Specifically, the EMI-related reliability issues are discussed, and solutions and guidelines are presented.read more
Citations
More filters
Journal ArticleDOI
Electric Drive Technology Trends, Challenges, and Opportunities for Future Electric Vehicles
Iqbal Husain,Burak Ozpineci,Sariful Islam,Emre Gurpinar,Gui-Jia Su,Wensong Yu,Shajjad Chowdhury,Lincoln Xue,Dhrubo Rahman,Raj Sahu +9 more
TL;DR: The electric drive technology trends for passenger electric and hybrid EVs with commercially available solutions in terms of materials, electric machine and inverter designs, maximum speed, component cooling, power density, and performance are discussed.
Journal ArticleDOI
AC-DC Converters for Electrolyzer Applications: State of the Art and Future Challenges
Burin Yodwong,Damien Guilbert,Matheepot Phattanasak,Wattana Kaewmanee,Melika Hinaje,Gianpaolo Vitale +5 more
TL;DR: It is shown that thyristors-based rectifiers are particularly fit for high-power applications but require the use of active and passive filters to enhance the power quality, and new emerging DC-DC converters must be employed to meet these important issues according to the availability of new power switching devices.
Journal ArticleDOI
Modeling and Reduction of Radiated EMI in a GaN IC-Based Active Clamp Flyback Adapter
TL;DR: In this paper, the authors developed a radiated electromagnetic interference (EMI) model for a gallium nitride (GaN) integrated circuit (IC)-based active clamp flyback converter.
Proceedings ArticleDOI
Advances of Modeling and Reduction of Conducted and Radiated EMI in Flyback Converters
TL;DR: The emerging flyback EMI challenges and research advances are analyzed and the future challenges and development of EMI in flyback converters are discussed.
Journal ArticleDOI
High-Speed Electric Drives: A Step Towards System Design
Filippo Savi,Davide Barater,Mauro Di Nardo,Michele Degano,Chris Gerada,Patrick Wheeler,Giampaolo Buticchi +6 more
TL;DR: A unified design methodology of the two sub-systems is presented considering the true operating conditions, allowing a more accurate assessment of power losses at system level and identifying the influence of the converter design choices on the electric machine performance.
References
More filters
BookDOI
Fundamentals of Power Semiconductor Devices
TL;DR: In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.
Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TL;DR: In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.
Journal ArticleDOI
High-temperature electronics - a role for wide bandgap semiconductors?
TL;DR: It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range.
Journal ArticleDOI
Review of Silicon Carbide Power Devices and Their Applications
TL;DR: The technology progress of SiC power devices and their emerging applications are reviewed and the design challenges and future trends are summarized.
Journal ArticleDOI
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
TL;DR: In this article, the characteristics and commercial status of both vertical and lateral GaN power devices are reviewed, providing the background necessary to understand the significance of these recent developments and the challenges encountered in GaN-based converter design, such as the consequences of faster switching on gate driver and board layout.