Journal ArticleDOI
Analysis of Series Resistance Losses in a-Si:H/c-Si Heterojunction Solar Cells
Ralf Gogolin,Mircea Turcu,R. Ferre,Juliane Clemens,Nils-Peter Harder,Rolf Brendel,Jan Schmidt +6 more
TLDR
In this paper, the authors presented an experimental method to quantify the series resistance of a-Si:H/cSi heterojunction solar cells with different deposition parameters and found that the best value for R676 (p)-a-Si/ITO petertodd of 042 Ω·cm petertodd 2>>\ 2>>\s for an ITO double layer with a 10-nm thin starting layer and an additional 90-nm top layer with good conductivity reached values below 0.Abstract:
We present an experimental method to quantify the series resistance R
a-Si/ITO
through the a-Si:H layers and the a-Si:H/ITO interface on test structures In order to optimize R
a-Si/ITO
, we apply different a-Si:H and ITO deposition parameters We find the best value for R
(p)-a-Si/ITO
of 042 Ω·cm
2
for an ITO double layer with a 10-nm-thin starting layer that provides good contact resistance and an additional 90-nm top layer that provides good conductivity For R
(n)-a-Si/ITO
, we reach values below 01 Ω·cm
2
We present an analysis of the series resistance and shading losses of our 100-cm
2
bifacial screen-printed a-Si:H/cSi heterojunction solar cells, which show an open-circuit voltage of V
oc
= 733 mV, demonstrating the excellent level of interface passivation The efficiency of 202% is limited by a low short-circuit current density of 371 mA/cm
2
and fill factor of 76%read more
Citations
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Journal ArticleDOI
Efficient silicon solar cells with dopant-free asymmetric heterocontacts
James Bullock,Mark Hettick,Mark Hettick,Jonas Geissbühler,Alison J. Ong,Alison J. Ong,Thomas Allen,Carolin M. Sutter-Fella,Carolin M. Sutter-Fella,Teresa Chen,Hiroki Ota,Hiroki Ota,Ethan W. Schaler,Stefaan De Wolf,Christophe Ballif,Andres Cuevas,Ali Javey,Ali Javey +17 more
TL;DR: In this paper, the dopant-free electron and hole carrier-selective heterocontacts using alkali metal fluorides and metal oxides, respectively, in combination with passivating intrinsic amorphous silicon interlayers, were successfully developed and implemented.
Journal ArticleDOI
Surface passivation of crystalline silicon solar cells: Present and future
TL;DR: In this paper, the authors focus on the future developments in the field of c-Si solar cells based on carrier-selective passivation layers and compare combinations of the various options of carrierselective layers concerning their combined selectivities and efficiency potentials.
Journal ArticleDOI
Junction Resistivity of Carrier-Selective Polysilicon on Oxide Junctions and Its Impact on Solar Cell Performance
Michael Rienäcker,Marcel Bossmeyer,Agnes Merkle,Udo Römer,Felix Haase,Jan Krügener,Rolf Brendel,Robby Peibst +7 more
TL;DR: In this paper, the junction resistivity of high quality carrier-selective polysilicon on oxide (POLO) junctions with the transfer length method was investigated and a back-junction back-contact solar cell with p-type and n-type POLO junctions was demonstrated.
Journal ArticleDOI
Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth
Andrea Tomasi,Bertrand Paviet-Salomon,Quentin Jeangros,Quentin Jeangros,Jan Haschke,Gabriel Christmann,Loris Barraud,Antoine Descoeudres,Johannes P. Seif,Sylvain Nicolay,Matthieu Despeisse,Stefaan De Wolf,Stefaan De Wolf,Christophe Ballif +13 more
TL;DR: In this article, the surface-dependent growth of silicon thin films, deposited by plasma processes, was exploited to eliminate the patterning of one of the doped carrier-collecting layers.
Journal ArticleDOI
A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies
TL;DR: In this paper, the rapid progress in the development of inorganic and organic solar cells (SCs) such as silicon, perovskite, III-V, quantum dot, dye sensitized, flexible SCs, thin film SCs and tandem SCs are reviewed.
References
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Journal ArticleDOI
24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer
Mikio Taguchi,Ayumu Yano,Satoshi Tohoda,Kenta Matsuyama,Yuya Nakamura,Takeshi Nishiwaki,Fujita Kazunori,Eiji Maruyama +7 more
TL;DR: In this article, a new record conversion efficiency of 24.7% was achieved at the research level by using a heterojunction with intrinsic thin-layer structure of practical size at a 98-μm thickness.
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Solar cell efficiency tables (version 44)
TL;DR: In this paper, the authors present a list of the highest independently confirmed efficiencies for solar cells and modules and provide guidelines for inclusion of results into these tables and new entries since January 2010 are reviewed.
Journal ArticleDOI
Solar cell efficiency tables (version 43)
Journal ArticleDOI
Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)
Makoto Tanaka,Mikio Taguchi,Takao Matsuyama,T. Sawada,Shinya Tsuda,Shoichi Nakano,Hiroshi Hanafusa,Yukinori Kuwano +7 more
TL;DR: A new type of a-Si/c-Si heterojunction solar cell, called the HIT (Heterojunction with Intrinsic Thin-layer) solar cell has been developed based on ACJ (Artificially Constructed Junction) technology as mentioned in this paper.
Journal ArticleDOI
Current Losses at the Front of Silicon Heterojunction Solar Cells
Zachary C. Holman,Antoine Descoeudres,L. Barraud,Fernando Zicarelli Fernandez,Johannes P. Seif,S. De Wolf,Christophe Ballif +6 more
TL;DR: In this paper, the current losses due to parasitic absorption in the indium tin oxide (ITO) and amorphous silicon (a-Si:H) layers at the front of silicon heterojunction solar cells are isolated and quantified.