Journal ArticleDOI
Atomic layer deposition of metals: Precursors and film growth
Reads0
Chats0
TLDR
A comprehensive overview of metal ALD can be found in this paper, where the authors discuss three challenges in detail for the example of Cu, for which ALD has been studied extensively due to its importance for microelectronic fabrication processes.Abstract:
The coating of complex three-dimensional structures with ultrathin metal films is of great interest for current technical applications, particularly in microelectronics, as well as for basic research on, for example, photonics or spintronics. While atomic layer deposition (ALD) has become a well-established fabrication method for thin oxide films on such geometries, attempts to develop ALD processes for elemental metal films have met with only mixed success. This can be understood by the lack of suitable precursors for many metals, the difficulty in reducing the metal cations to the metallic state, and the nature of metals as such, in particular their tendency to agglomerate to isolated islands. In this review, we will discuss these three challenges in detail for the example of Cu, for which ALD has been studied extensively due to its importance for microelectronic fabrication processes. Moreover, we give a comprehensive overview over metal ALD, ranging from a short summary of the early research on the ALD of the platinoid metals, which has meanwhile become an established technology, to very recent developments that target the ALD of electropositive metals. Finally, we discuss the most important applications of metal ALD.read more
Citations
More filters
Journal ArticleDOI
Bifunctional Heterostructured Transition Metal Phosphides for Efficient Electrochemical Water Splitting
Haojie Zhang,A. Wouter Maijenburg,Xiaopeng Li,Stefan L. Schweizer,Ralf B. Wehrspohn,Ralf B. Wehrspohn +5 more
Phase- and Size-Controlled Synthesis of Hexagonal and Cubic CoO Nanocrystals
TL;DR: Highly crystalline, phase- and size-controlled CoO nanocrystals of hexagonal and cubic phases have been prepared by thermal decomposition of Co(acac)3 in oleylamine under an inert atmosphere.
Journal ArticleDOI
Strategies and implications of atomic layer deposition in photoelectrochemical water splitting: Recent advances and prospects
TL;DR: In this article, a review of post-surface modification using atomic layer deposition (ALD) has been presented, which can facilitate the development of nanostructure materials on the atomic scale, engineering of bandgaps, passivation of surfaces, improvement of catalysts, and modification of the light harvesting properties of a surface.
Journal ArticleDOI
Passivation of III–V surfaces with crystalline oxidation
Pekka Laukkanen,Marko Patrick John Punkkinen,Mikhail Kuzmin,Mikhail Kuzmin,Kalevi Kokko,Lang Jouko,Robert M. Wallace +6 more
TL;DR: In this paper, the authors discuss the use of atomically thin, ordered oxide interfacial layers of III-V compound semiconductors since they provide a unique opportunity for metal-oxide semiconductor applications, compared to the more common approach to avoid surface oxidation.
Journal ArticleDOI
Plasma-enhanced atomic layer deposition of nickel nanotubes with low resistivity and coherent magnetization dynamics for 3D spintronics
Maria Carmen Giordano,Korbinian Baumgaertl,S. Escobar Steinvall,M Vuichard,A. Fontcuberta i Morral,Dirk Grundler +5 more
TL;DR: In this article, a plasma-enhanced atomic layer deposition (ALD) was used to prepare conformal nickel thin films and nanotubes using nickelocene as a precursor, water as the oxidant agent, and an in-cycle plasmaenhanced reduction step with hydrogen.
References
More filters
Journal ArticleDOI
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
TL;DR: In this paper, the surface chemistry of the trimethylaluminum/water ALD process is reviewed, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials.
Journal ArticleDOI
Nanowire transistors without junctions
Jean-Pierre Colinge,Chi-Woo Lee,Aryan Afzalian,Aryan Afzalian,Nima Dehdashti Akhavan,Ran Yan,Isabelle Ferain,Pedram Razavi,B. O'Neill,Alan Blake,Mary White,Anne-Marie Kelleher,Brendan McCarthy,Richard Murphy +13 more
TL;DR: A new type of transistor in which there are no junctions and no doping concentration gradients is proposed and demonstrated, which has near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
Journal ArticleDOI
Ultrafine metal particles
TL;DR: In this paper, a statistical growth model based on the Central Limit Theorem has been formulated for liquid-like coalescence of particles; this theory accounts satisfactorily for all the data, as well as for most size distributions published in the literature.
Journal ArticleDOI
Ionized physical vapor deposition (IPVD): A review of technology and applications
TL;DR: In this article, the development and application of magnetron sputtering systems for ionized physical vapor deposition (IPVD) is reviewed, and the application of a secondary discharge, inductively coupled plasma magnetron (ICP-MS), microwave amplified magnetron, and self-sustained sputtering (SSS) is discussed as well as the hollow cathode magnetron discharges.