Atypical quantized resistances in millimeter-scale epitaxial graphene p-n junctions
Albert F. Rigosi,Dinesh K. Patel,Dinesh K. Patel,Martina Marzano,Martina Marzano,Mattias Kruskopf,Mattias Kruskopf,Heather M. Hill,Hanbyul Jin,Hanbyul Jin,Jiuning Hu,Jiuning Hu,Angela R. Hight Walker,Massimo Ortolano,Luca Callegaro,Chi-Te Liang,David B. Newell +16 more
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TLDR
Measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at ν = 2 (R H ≈ 12906 Ω) that take the form: a b R H .About:
This article is published in Carbon.The article was published on 2019-01-01 and is currently open access. It has received 26 citations till now. The article focuses on the topics: Electron-beam lithography & Photolithography.read more
Citations
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The Quantum Hall Effect in the Era of the New SI.
TL;DR: The quantum Hall effect (QHE), and devices reliant on it, will continue to serve as the foundation of the ohm while also expanding its territory into other SI derived units.
Journal Article
Quantum Hall resistance standard in graphene devices under relaxed experimental conditions
Félicien Schopfer,Rebeca Ribeiro-Palau,F. Lafont,J. Brun-Picard,Dimitrios Kazazis,Adrien Michon,Fabien Cheynis,O. Couturaud,Christophe Consejo,Benoit Jouault,W. Poirier +10 more
TL;DR: In this paper, the experimental conditions necessary for the operation of devices made of high-quality graphene grown by chemical vapour deposition on silicon carbide can be extended and significantly relaxed compared with those for state-of-the-art GaAs/AlGaAs devices.
Journal Article
Utilizing confocal laser scanning microscopy for rapid optical characterization of graphene
Vishal Panchal,Yanfei Yang,Guangjun Cheng,Jiuning Hu,Mattias Kruskopf,Chieh-I Liu,Albert F. Rigosi,Christos Melios,Angela R. Hight Walker,David B. Newell,Olga Kazakova,Randolph E. Elmquist +11 more
TL;DR: In this article, the authors demonstrate the optimized balance of image resolution and acquisition time of non-invasive confocal laser scanning microscopy (CLSM), rendering it an indispensable tool for rapid analysis of mass-produced graphene.
Journal ArticleDOI
Analytical determination of atypical quantized resistances in graphene p-n junctions
Albert F. Rigosi,Martina Marzano,Antonio Levy,Heather M. Hill,Dinesh K. Patel,Dinesh K. Patel,Mattias Kruskopf,Mattias Kruskopf,Hanbyul Jin,Hanbyul Jin,Randolph E. Elmquist,David B. Newell +11 more
TL;DR: A mathematical approach is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow and is supported with experimental data from graphene devices with multiple source and drain terminals.
Journal Article
Gateless and reversible carrier density tunability in epitaxial graphene devices functionalized with chromium tricarbonyl
Albert F. Rigosi,Mattias Kruskopf,Heather M. Hill,Hanbyul Jin,Bi-Yi Wu,Philip E. Johnson,Siyuan Zhang,Michael Berilla,Angela R. Hight Walker,Christina A. Hacker,David B. Newell,Randolph E. Elmquist +11 more
TL;DR: In this paper, the surface of EG devices with chromium tricarbonyl -Cr(CO)3 has been functionalized to stabilize the charge carrier density in air.
References
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Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene
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