Graphene photodetectors for high-speed optical communications

TLDR: In this paper, an asymmetric metallization scheme is adopted to break the mirror symmetry of the internal electric-field profile in conventional graphene field effect transistor channels, allowing for efficient photodetection.

Abstract: Although silicon has dominated solid-state electronics for more than four decades, a variety of other materials are used in photonic devices to expand the wavelength range of operation and improve performance. For example, gallium-nitride based materials enable light emission at blue and ultraviolet wavelengths1, and high index contrast silicon-on-insulator facilitates ultradense photonic devices2,3. Here, we report the first use of a photodetector based on graphene4,5, a two-dimensional carbon material, in a 10 Gbit s−1 optical data link. In this interdigitated metal–graphene–metal photodetector, an asymmetric metallization scheme is adopted to break the mirror symmetry of the internal electric-field profile in conventional graphene field-effect transistor channels6,7,8,9, allowing for efficient photodetection. A maximum external photoresponsivity of 6.1 mA W−1 is achieved at a wavelength of 1.55 µm. Owing to the unique band structure of graphene10,11 and extensive developments in graphene electronics12,13 and wafer-scale synthesis13, graphene-based integrated electronic–photonic circuits with an operational wavelength range spanning 300 nm to 6 µm (and possibly beyond) can be expected in the future. A graphene-based photodetector with unprecedented photoresponsivity and the ability to perform error-free detection of 10 Gbit s−1s data streams is demonstrated. The results suggest that graphene-based photonic devices have a bright future in telecommunications and other optical applications.