Journal ArticleDOI
Common Mode Noise Analysis for Cascaded Boost Converter With Silicon Carbide Devices
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TLDR
In this article, an electromagnetic interference (EMI) model for a two-stage cascaded boost converter is presented to distinguish its noise sources, and several methods are presented for minimizing the noise sources using a ferrite bead and a modified gate driver.Abstract:
In the paper, an electromagnetic interference (EMI) model for a two-stage cascaded boost converter is presented to distinguish its noise sources. To illustrate the effects of switching speeds on EMI generation potential, the relationships between the time domain and the frequency domain with all-SiC and SiC–Si device combinations are provided. It is found that the voltage ripples and spikes at turn-OFF generate common mode (CM) noise in the high-frequency range, above the cutoff frequency determined by the short switching time of the SiC MOSFET. Several methods are presented for minimizing the noise sources using a ferrite bead and a modified gate driver. Experimental measurements of SiC switching waveforms and CM EMI taken from a 600-W prototype two-stage cascaded boost converter operating at 100 kHz are presented to validate the CM noise analysis.read more
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Journal ArticleDOI
Comparative Analysis on Conducted CM EMI Emission of Motor Drives: WBG Versus Si Devices
TL;DR: This paper investigates and quantifies the increase in the conductedCM EMI emission of a pulse width modulation inverter-based motor drive when SiC and GaN devices are adopted and reveals that the influence of dv/dt on the conducted CM emission is generally limited.
Journal ArticleDOI
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices
Boyi Zhang,Shuo Wang +1 more
TL;DR: The literature on EMI research in power electronics systems with WBG devices is reviewed, and the EMI-related reliability issues are discussed, and solutions and guidelines are presented.
Journal ArticleDOI
A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules
Yang Yuan,Yang Wen,Gao Yong +2 more
TL;DR: In this article, an active gate driver (AGD) for high-power SiC mosfet s is presented to fully utilize its potential of high-speed characteristic under different operation temperatures and load currents.
References
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Journal ArticleDOI
Energy Management and Operational Planning of a Microgrid With a PV-Based Active Generator for Smart Grid Applications
TL;DR: A determinist energy management system for a microgrid, including advanced PV generators with embedded storage units and a gas microturbine is proposed, which is implemented in two parts: a central energy management of the microgrid and a local power management at the customer side.
Journal ArticleDOI
Novel High Step-Up DC–DC Converter With Coupled-Inductor and Voltage-Doubler Circuits
TL;DR: A novel high step-up dc-dc converter with coupled-inductor and voltage-doubler circuits is proposed, which achieves highstep-up voltage gain with appropriate duty ratio and low voltage stress on the power switches.