Journal ArticleDOI
Correction of image drift and distortion in a scanning electron microscopy
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TLDR
A new method to correct drift and distortion aberrations of scanning electron microscope images, and an experiment shows that one pixel maximum correction is obtained for the employed high‐resolution electron microscopic system.Abstract:
Continuous research on small-scale mechanical structures and systems has attracted strong demand for ultrafine deformation and strain measurements. Conventional optical microscope cannot meet such requirements owing to its lower spatial resolution. Therefore, high-resolution scanning electron microscope has become the preferred system for high spatial resolution imaging and measurements. However, scanning electron microscope usually is contaminated by distortion and drift aberrations which cause serious errors to precise imaging and measurements of tiny structures. This paper develops a new method to correct drift and distortion aberrations of scanning electron microscope images, and evaluates the effect of correction by comparing corrected images with scanning electron microscope image of a standard sample. The drift correction is based on the interpolation scheme, where a series of images are captured at one location of the sample and perform image correlation between the first image and the consequent images to interpolate the drift-time relationship of scanning electron microscope images. The distortion correction employs the axial symmetry model of charged particle imaging theory to two images sharing with the same location of one object under different imaging fields of view. The difference apart from rigid displacement between the mentioned two images will give distortion parameters. Three-order precision is considered in the model and experiment shows that one pixel maximum correction is obtained for the employed high-resolution electron microscopic system.read more
Citations
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Review: Deep Learning in Electron Microscopy
TL;DR: In this paper, a review of deep learning in electron microscopy is presented, with a focus on hardware and software needed to get started with deep learning and interface with electron microscopes.
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Correction of Scanning Electron Microscope Imaging Artifacts in a Novel Digital Image Correlation Framework
TL;DR: A unified general framework to correct for the three dominant types of SEM artifacts, i.e. spatial distortion, drift distortion and scan line shifts is proposed and the potential of the framework is tested by a number of virtual experiments.
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TL;DR: This review paper offers a practical perspective aimed at developers with limited familiarity of deep learning in electron microscopy that discusses hardware and software needed to get started with deep learning and interface with electron microscopes.
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A novel sampling moiré method and its application for distortion calibration in scanning electron microscope
TL;DR: In this article, a direct sampling moire method (DSM) was developed for simple and fast analysis of grating distortion in high-resolution scanning electron microscope (SEM) images.
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A Multiscale Material Testing System for In Situ Optical and Electron Microscopes and Its Application.
TL;DR: A novel material testing system that uses hierarchical designs for in-situ mechanical characterization of multiscale materials is reported, which can measure mechanical properties of materials with characteristic lengths ranging from millimeters to tens of nanometers while load capacity can vary from several hundred micronewtons to several nanonewtons.
References
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Journal ArticleDOI
Two-dimensional digital image correlation for in-plane displacement and strain measurement: a review
TL;DR: In this article, a review of the 2D digital image correlation (2D DIC) technique for displacement field measurement and strain field estimation is presented, and detailed analyses of the measurement accuracy considering the influences of both experimental conditions and algorithm details are provided.
Journal ArticleDOI
Wide-band detector for micro-microampere low-energy electron currents
T. E. Everhart,R. F. M. Thornley +1 more
TL;DR: In this article, the scintillator-light-pipe-photomultiplier system is used to accelerate a few electron volts emerging from a source a few millimetres in diameter.
Journal ArticleDOI
Scanning Electron Microscopy for Quantitative Small and Large Deformation Measurements Part I: SEM Imaging at Magnifications from 200 to 10,000
TL;DR: In this article, a series of baseline displacement measurements have been obtained using 2D Digital Image Correlation (2D-DIC) and images from Scanning Electron Microscopes (SEM).
Proceedings ArticleDOI
45nm High-k + metal gate strain-enhanced transistors
C. Auth,Annalisa Cappellani,J.-S. Chun,A. Dalis,Alison Davis,Tahir Ghani,G. Glass,Timothy E. Glassman,Michael K. Harper,Michael L. Hattendorf,P. Hentges,S. Jaloviar,Subhash M. Joshi,Jason Klaus,K. Kuhn,D. Lavric,M. Lu,H. Mariappan,Kaizad Mistry,B. Norris,Nadia M. Rahhal-Orabi,Pushkar Ranade,J. Sandford,Lucian Shifren,V. Souw,K. Tone,F. Tambwe,A. Thompson,D. Towner,T. Troeger,P. Vandervoorn,Charles H. Wallace,J. Wiedemer,Christopher J. Wiegand +33 more
TL;DR: In this article, two key process features that are used to make 45 nm generation metal gate + high-k gate dielectric CMOS transistors are highlighted in this paper.
Journal ArticleDOI
In situ Scanning Electron Microscopy (SEM) observation of interfaces within plastic lithium batteries
F Orsini,A. Du Pasquier,B. Beaudoin,Jean-Marie Tarascon,M. Trentin,N. Langenhuizen,E. de Beer,Peter H. L. Notten +7 more
TL;DR: In this article, cross-sections of plastic rechargeable Li-cells were observed in a quasi-in situ mode by means of a scanning electron microscope, and the influence of the current density on the morphology of the lithium deposit was studied from these three different configurations.