Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC
TLDR
In this article, the performance of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated.Abstract:
Operation up to 300 °C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input or- nor gate operated on - 15 V supply voltage from 27 °C up to 300 °C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.read more
Citations
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Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC
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Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC
Vuong Van Cuong,Vuong Van Cuong,Seiji Ishikawa,Tomonori Maeda,Hiroshi Sezaki,Satoshi Yasuno,Tomoyuki Koganezawa,Takamichi Miyazaki,Shin-Ichiro Kuroki +8 more
TL;DR: In this article, the influence of Ni and Nb thickness on the electrical properties and high-temperature reliability of Ni(x)/Nb(100 − x)/n-type 4H-SiC ohmic contacts, where x = 25, 50 or 75 nm, was investigated.
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Silicon Carbide High Temperature Electronics - Is This Rocket Science?
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