Open Access
Effects of Grain Boundaries on the Channel Conductance of SO1 MOSFET's
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The article was published on 1983-01-01 and is currently open access. It has received 13 citations till now. The article focuses on the topics: Channel length modulation & Short-channel effect.read more
Citations
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Journal ArticleDOI
Anomalous leakage current in LPCVD PolySilicon MOSFET's
TL;DR: The anomalous leakage current I L in LPCVD polysilicon MOSFETs is attributed to field emission via grain-boundary traps in the (front) surface depletion region at the drain, and an analytic model that describes the strong dependences of I L on the gate and drain voltages is developed.
Journal ArticleDOI
Current-voltage characteristics of thin-film SOI MOSFET's in strong inversion
Hyung-Kyu Lim,Jerry G. Fossum +1 more
TL;DR: In this paper, a simple analytic model for the steady-state currentvoltage characteristics of strongly inverted silicon-on-insulator (SOI) MOSFET's is developed.
Journal ArticleDOI
On the pseudo-subthreshold characteristics of polycrystalline-silicon thin-film transistors with large grain size
TL;DR: In this article, a two-dimensional nonplanar simulator for polycrystalline-silicon thin-film transistors (poly-Si TFTs) was developed, in which the influence of trapped charges and carrier scattering within the grain boundary region are incorporated into Poisson's equations and drift-diffusion current formulations, respectively.
Journal ArticleDOI
Subthreshold behavior of thin-film LPCVD PolySilicon MOSFET's
TL;DR: A physical model that characterizes the subthreshold drain current (gatevoltage swing) and threshold voltage of thin-film LPCVD polysilicon MOSFET's is developed and supported experimentally.
Journal ArticleDOI
Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrystalline Silicon
Satwinder Malhi,Hisashi Shichijo,Sanjay K. Banerjee,R. Sundaresan,M. Elahy,Gordon P. Pollack,William F. Richardson,Ashwin H. Shah,L.R. Hite,R.H. Womack,P.K. Chatterjiee,H.W. Lam +11 more
TL;DR: In this article, a design methodology was developed that yields devices which have low threshold voltage, high drive current, low leakage current, tight parameteric control, and reduced topology, while requiring no nonstandard materials, processes, and tools.
References
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Journal ArticleDOI
Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's
Hyung-Kyu Lim,Jerry G. Fossum +1 more
TL;DR: In this article, the charge coupling between the front and back gates of thin-film silicon-on-insulator (SOI) MOSFETs is analyzed, and closed-form expressions for the threshold voltage under all possible steady-state conditions are derived.
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Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
S.C. Sun,James D. Plummer +1 more
TL;DR: In this paper, an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented, which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.
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Conductivity behavior in polycrystalline semiconductor thin film transistors
TL;DR: In this article, the effect of thermal annealing on implanted and unimplanted CdSe TFTs has been studied and the model appears to give a general description of the conductivity behavior in polycrystallin...
Journal ArticleDOI
Hydrogenation of transistors fabricated in polycrystalline-silicon films
Theodore I. Kamins,P.J. Marcoux +1 more
TL;DR: A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects as discussed by the authors, and the conditions to maximize the hydrogenation effect were briefly investigated.