Journal ArticleDOI
Electrical Characterization of Flexible InGaZnO Transistors and 8-b Transponder Chip Down to a Bending Radius of 2 mm
TLDR
In this article, the fabrication and characterization of highly flexible indium-gallium-zincoxide (IGZO)-based thin-film transistors (TFTs) and integrated circuits on a transparent and thin polymer substrate is presented.Abstract:
In this paper, we present the fabrication and characterization of highly flexible indium-gallium–zinc-oxide (IGZO)-based thin-film transistors (TFTs) and integrated circuits on a transparent and thin polymer substrate. Mechanical reliability tests are performed under bending conditions down to a bending radius of 2 mm. All the TFT parameters show only a weak dependence on mechanical strain. TFTs can withstand bending strain up to 0.75% without any significant change in the device operation. Mechanical reliability is further demonstrated to a higher TFT integration level by ring oscillators and 8-b transponder chips operating at a bending radius of 2 mm.read more
Citations
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Journal ArticleDOI
Metal oxide semiconductor thin-film transistors for flexible electronics
Luisa Petti,Niko Munzenrieder,Niko Munzenrieder,Christian Vogt,Hendrik Faber,Lars Büthe,Giuseppe Cantarella,Francesca Bottacchi,Thomas D. Anthopoulos,Gerhard Tröster +9 more
TL;DR: Flexible metal oxide semiconductor thin-film transistors (TFTs) are considered the most promising technology for tomorrow's electronics as discussed by the authors and are therefore considered to be a promising technology in the field of flexible electronics.
Journal ArticleDOI
A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics
Journal ArticleDOI
Mechanical and Electronic Properties of Thin-Film Transistors on Plastic, and Their Integration in Flexible Electronic Applications.
Paul Heremans,Ashutosh Tripathi,Albert de Jamblinne de Meux,Edsger C. P. Smits,Bo Hou,Geoffrey Pourtois,Gerwin H. Gelinck +6 more
TL;DR: The mechanical behavior of thin-film transistors used in active-matrix displays is considered, including amorphous oxide semiconductors, and the suitability of the different material classes for those applications is assessed.
Journal ArticleDOI
Review of recent advances in flexible oxide semiconductor thin-film transistors
TL;DR: In this paper, the authors describe the recent advances in flexible oxide thin-film transistors (TFTs), one of the rapidly emerging technologies for the next-generation display applications.
Journal ArticleDOI
Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status
J. G. Troughton,Del Atkinson +1 more
TL;DR: An overview of the history and development of metal oxide devices, from their earliest inception to the most recent advances, can be found in this article, with a discussion of the factors that need to be considered in designing metal oxide semiconducting devices, including material choice, deposition methods and device structure.
References
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Journal ArticleDOI
Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping
TL;DR: The origins of the prominent features of AOS devices from the viewpoint of materials science of A OS indicate that electron transport in oxide semiconductors are insensitive to random structures and these oxides do not form high-density defects that affect electron transport and TFT operation.
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Elastic relationships in layered composite media with approximation for the case of thin films on a thick substrate
TL;DR: In this paper, a general theory for the elastic interactions in a composite plate of layers with different relaxed planar dimensions is presented, and the experimental determination of the planar substrate strain is presented as a rigorous test of the correctness of the theory.
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Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states
TL;DR: In this article, a model of the carrier transport and the subgap density of states in amorphous InGaZnO4 (a-IGZO) TFTs is presented.
Journal ArticleDOI
Wafer-scale design of lightweight and transparent electronics that wraps around hairs
Giovanni A. Salvatore,Niko Munzenrieder,Thomas Kinkeldei,Luisa Petti,Christoph Zysset,Ivo Strebel,Lars Büthe,Gerhard Tröster +7 more
TL;DR: A wafer-scale process scheme to realize ultra flexible, lightweight and transparent electronics on top of a 1-μm thick parylene film that is released from the carrier substrate after the dissolution in water of a polyvinyl- alcohol layer is proposed.
Journal ArticleDOI
Fully Solution-Processed Flexible Organic Thin Film Transistor Arrays with High Mobility and Exceptional Uniformity
TL;DR: This work built highly uniform organic TFT arrays with average mobility levels as high as 0.80 cm2 V−1 s−1 and ideal threshold voltages of 0 V by combining the fabrication techniques of silver nanoparticle inks, organic semiconductors, and insulating polymers on thin plastic films.