Journal ArticleDOI
Electrical properties of ZnO nanowire field effect transistors characterized with scanning probes
Zhiyong Fan,Jia Grace Lu +1 more
TLDR
In this paper, single ZnO nanowires are configured as field effect transistors and their electrical properties are characterized using scanning probe microscopy (SPM) to map the electric potential distribution on the nanowire.Abstract:
Single ZnO nanowires are configured as field effect transistors and their electrical properties are characterized using scanning probe microscopy (SPM). Scanning surface potential microscopy is used to map the electric potential distribution on the nanowire. Potential drop along the nanowire and at the contacts are resolved, and contact resistances are estimated. Furthermore, conductive SPM tip is used as a local gate to manipulate the electrical property. The local change of electron density induced by a negatively biased tip significantly affects the current transport through the nanowire.read more
Citations
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Journal ArticleDOI
Flexible piezotronic strain sensor
TL;DR: The strain sensor developed here has applications in strain and stress measurements in cell biology, biomedical sciences, MEMS devices, structure monitoring, and more.
Journal ArticleDOI
Metal oxide nano-crystals for gas sensing.
TL;DR: The gas experiments presented confirm good sensing properties, the possibility to use dopants and catalyser such in thin film gas sensors and the real integration in low power consumption transducers of single crystalline nanobelts prove the feasibility of large scale manufacturing of well-organized sensor arrays based on different nanostructures.
Journal ArticleDOI
ZnO Devices and Applications: A Review of Current Status and Future Prospects
TL;DR: There are still a number of important issues that need to be resolved before ZnO can be transitioned to commercial use, not to mention the stiff competition it is facing with GaN, which is much more mature in terms of devices.
Journal ArticleDOI
Gigantic enhancement in response and reset time of ZnO UV nanosensor by utilizing Schottky contact and surface functionalization
Jun Zhou,Yudong Gu,Youfan Hu,Wenjie Mai,Ping-Hung Yeh,Gang Bao,Ashok K. Sood,Dennis L. Polla,Zhong Lin Wang +8 more
TL;DR: By utilizing Schottky contact instead of Ohmic contact in device fabrication, the UV sensitivity of the ZnO nanowire nanosensor has been improved by four orders of magnitude, and the reset time has been drastically reduced.
Journal ArticleDOI
Gate-refreshable nanowire chemical sensors
Zhiyong Fan,Jia Grace Lu +1 more
TL;DR: In this article, ZnO nanowire field effect transistors were implemented as highly sensitive chemical sensors for detection of NO2 and NH3 at room temperature, and a strong negative field was utilized to refresh the sensors by an electrodesorption mechanism.
References
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Journal ArticleDOI
Room-temperature transistor based on a single carbon nanotube
TL;DR: In this paper, the fabrication of a three-terminal switching device at the level of a single molecule represents an important step towards molecular electronics and has attracted much interest, particularly because it could lead to new miniaturization strategies in the electronics and computer industry.
Journal ArticleDOI
Controlled growth of ZnO nanowires and their optical properties
Peidong Yang,Haoquan Yan,Samuel S. Mao,Richard E. Russo,Justin C. Johnson,Richard J. Saykally,N. Morris,Johnny Pham,R. He,Heon Jin Choi +9 more
TL;DR: In this paper, a survey of recent developments in the rational synthesis of single-crystalline zinc oxide nanowires and their unique optical properties is presented, based on the fundamental understanding of the vapor-liquid-solid (VLS) nanowire growth mechanism, different levels of growth controls have been achieved.
Journal ArticleDOI
ZnO nanowire field-effect transistor and oxygen sensing property
TL;DR: In this paper, single-crystal ZnO nanowires are synthesized using a vapor trapping chemical vapor deposition method and configured as field effect transistors, and electrical transport studies show n-type semiconducting behavior with a carrier concentration of ∼107cm−1 and an electron mobility of ∼17cm2∕Vs.
Journal ArticleDOI
ZnO nanowires synthesized by vapor trapping CVD method
TL;DR: In this paper, a chemical vapor deposition (CVD) process modified with vapor trapping method has been used to synthesize n-type ZnO nanowires with high carrier concentration without incorporating impurity dopants.
Book
Dekker encyclopedia of nanoscience and nanotechnology
TL;DR: The second edition of the Dekker Encyclopedia of Nanoscience and nanotechnology as discussed by the authors provides a comprehensive and detailed review, from multiple angles, of major developments in the human quest for understanding and mastering of physical, chemical and biological objects and structures having at least one dimension smaller than about 100 nm.