Journal ArticleDOI
Electromechanical computing at 500°C with silicon carbide
TLDR
A microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500°C with ultralow leakage current is reported, a promising approach for low-power, high-performance logic operation at temperatures higher than 300°C, beyond the capability of conventional silicon technology.Abstract:
Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300°C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, microwave operating frequencies, radiation hardness, and nanoscale dimensions. Here, we report a microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500°C with ultralow leakage current.read more
Citations
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Journal ArticleDOI
Nanoelectromechanical contact switches
Owen Y. Loh,Horacio D. Espinosa +1 more
TL;DR: The potential of NEM-switch technologies to complement or selectively replace conventional complementary metal-oxide semiconductor technology, and the challenges involved in the large-scale manufacture of a representative set of N EM-based devices are reviewed.
Journal ArticleDOI
A sub-1-volt nanoelectromechanical switching device
TL;DR: The sub-1 V operation of a NEM switch is reported through the introduction of a novel pipe clip device structure and an effective air gap fabrication technique, primarily attributed to the incorporation of a 4-nm-thick air gap, which is the smallest reported so far for a Nem switch generated using a 'top-down' approach.
Journal ArticleDOI
Graphene nanoelectromechanical systems
Changyao Chen,James Hone +1 more
TL;DR: This paper reviews the basic properties of graphene NEMS, and recent work toward exploring device properties, readout techniques, and applications.
Journal ArticleDOI
Origami-based tunable truss structures for non-volatile mechanical memory operation.
TL;DR: In this paper, the authors present volumetric origami cells with tunable stability and stiffness, and demonstrate their feasibility as non-volatile mechanical memory storage devices, where two pairs of TCO cells are interconnected and one pair acts as a control for the other pair.
Journal ArticleDOI
Advances in silicon carbide science and technology at the micro- and nanoscales
TL;DR: In this article, the authors focus on the materials science and processing technologies for silicon carbide thin films and low dimensional structures, and details recent progress in manufacturing technology, including deposition, metallization, and fabrication of semiconductor microdevices, with emphasis on sensor technology.
References
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Carbon nanotube-based nonvolatile random access memory for molecular computing
TL;DR: A concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed and the viability of this concept is demonstrated by detailed calculations and by the experimental realization of a reversible, bistable nanotube-based bit.
Journal ArticleDOI
Low-power logic styles: CMOS versus pass-transistor logic
R. Zimmermann,Wolfgang Fichtner +1 more
TL;DR: This paper shows that complementary CMOS is the logic style of choice for the implementation of arbitrary combinational circuits if low voltage, low power, and small power-delay products are of concern.
Journal ArticleDOI
High-temperature electronics - a role for wide bandgap semiconductors?
TL;DR: It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range.
Journal ArticleDOI
Towards single-molecule nanomechanical mass spectrometry
Akshay Naik,Mehmet Selim Hanay,Wayne K. Hiebert,Wayne K. Hiebert,X. L. Feng,Michael L. Roukes +5 more
TL;DR: In this article, a nanoelectromechanical-based mass spectrometer was used for the detection of individual molecular species in real-time with a few to single molecules.
Journal ArticleDOI
Nanodevice motion at microwave frequencies
TL;DR: The construction of nanodevices that will operate with fundamental frequencies in the previously inaccessible microwave range (greater than 1 gigahertz) is described, representing a significant advance in the quest for extremely high-frequency nanoelectromechanical systems.