Journal ArticleDOI
Elementary calculation of the branch-point energy in the continuum of interface-induced gap states
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In this paper, it was shown that the width of the band gap at the mean value point equals the dielectric band gap and that the empirical tight-binding approximation reproduces the dispersion of the GW valence bands from the middle to the mean-value point of the Brillouin zone.About:
This article is published in Applied Surface Science.The article was published on 1997-06-02. It has received 32 citations till now. The article focuses on the topics: Direct and indirect band gaps & Band gap.read more
Citations
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Insulated gate and surface passivation structures for GaN-based power transistors
TL;DR: In this paper, the authors describe critical issues and problems including leakage current, current collapse and threshold voltage instability in high-electron-mobility transistors (HEMTs) using oxides, nitrides and high-κ dielectrics.
Journal ArticleDOI
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
TL;DR: In this article, the effect of electronic states at insulator-semiconductor interfaces on current linearity of GaN MIS-HEMTs has been discussed and effective surface passivation schemes in conjunction with field-plate structures and emerging device structures utilizing multi-nanochannels under the gate region.
Journal ArticleDOI
Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors
Zenji Yatabe,Yujin Hori,Wan-Cheng Ma,Joel T. Asubar,Masamichi Akazawa,Taketomo Sato,Tamotsu Hashizume +6 more
TL;DR: In this article, the authors present a systematic characterization of electronic states at insulators/(Al)GaN interfaces, particularly focusing on insulator/AlGaN/GaN structures.
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Liquid-phase sensors using open-gate AlGaN∕GaN high electron mobility transistor structure
TL;DR: In this paper, the open-gate AlGaN∕GaN high electron mobility transistor (HEMT) structures were investigated in aqueous solutions and polar liquids, and the sensitivity for the potential change was 57.5mV∕pH, very close to the theoretical value of 58.9mVΩpH at 24°C for the Nernstian response to H+ ions.
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Interface models and processing technologies for surface passivation and interface control in III–V semiconductor nanoelectronics
TL;DR: The Si-ICL technique has been successfully applied to surface passivation of nanowires and to formation of a HfO2 high-k dielectric/GaAs interfaces with low values of the interface state density as discussed by the authors.
References
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Journal ArticleDOI
Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies.
TL;DR: In this article, a first-principles theory of the quasiparticle energies in semiconductors and insulators described in terms of the electron self-energy operator is presented.
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Wave-Number-Dependent Dielectric Function of Semiconductors
TL;DR: In this paper, the wave-number-dependent dielectric function is derived for various models of a semiconductor and expressions for the wave number-dependent Dielectric functions are derived for different models of semiconductors.
Journal ArticleDOI
Special Points in the Brillouin Zone
D. J. Chadi,Marvin L. Cohen +1 more
TL;DR: In this article, the average over the Brillouin zone of a periodic function of wave vector (e.g., energy, charge density, dipole matrix elements, etc.) can be determined in a simple and accurate way once the values of the function at these points are specified.
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Surface States and Barrier Height of Metal‐Semiconductor Systems
A. M. Cowley,S. M. Sze +1 more
TL;DR: In this paper, the dependence of the barrier height of metal-semiconductor systems upon the metal work function is derived based on the following assumptions: (1) the contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it is further assumed that this layer is transparent to electrons with energy greater than the potential barrier but can withstand potential across it.
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