Journal ArticleDOI
Enhanced intervalley scattering of aluminum oxide-deposited graphene
TLDR
In this paper, the effect of an oxide capping layer on the magnetotransport properties of graphene was investigated as a function of gate voltages and temperatures, and it was observed that the phase coherence and intervalley scattering rates are enhanced with the deposition of Al2O3 on graphene film compared to uncovered graphene.About:
This article is published in Carbon.The article was published on 2017-11-01. It has received 7 citations till now. The article focuses on the topics: Graphene oxide paper & Graphene nanoribbons.read more
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Transition between electron localisation and antilocalisation in graphene
TL;DR: It is shown that quantum interference in graphene can result in antilocalization of charge carriers--an increase of the conductance, which is detected by a negative magnetoconductance, due to weak electron-phonon scattering.
Journal ArticleDOI
Fowler-Nordheim tunneling characteristics of graphene/hBN/metal heterojunctions
TL;DR: In this paper, the back-gate dependent tunneling properties of graphene/hBN/metal heterojunction back-gated field effect transistors (FETs) are investigated.
Journal ArticleDOI
Ultraviolet-light-driven carrier density modulation of graphene based field effect transistors under oxygen- and argon atmosphere
TL;DR: In this article, the authors demonstrate the deep ultraviolet light driven doping tunability of a graphene-based field effect transistor in presence of oxygen and argon atmosphere and confirm the doping effect and its reversibility from Raman spectroscopy.
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Structural defects controlled oxidation of UV irradiated graphene-based field effect transistors
TL;DR: In this paper, a comparative analysis of UV irradiations on graphene-based field effect transistors (FETs) enclosed and unenclosed in quartz tube is presented, which shed light on the formation of natural structural defects in graphene, which is an essential factor for practical visualization of graphenebased electronic and optoelectronic devices.
References
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Journal ArticleDOI
Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
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The rise of graphene
TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
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Two-dimensional gas of massless Dirac fermions in graphene
Kostya S. Novoselov,A. K. Geim,Sergey V. Morozov,Da Jiang,Mikhail I. Katsnelson,Irina V. Grigorieva,S. V. Dubonos,A. A. Firsov +7 more
TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
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Interpretation of Raman spectra of disordered and amorphous carbon
Andrea C. Ferrari,John Robertson +1 more
TL;DR: In this paper, a model and theoretical understanding of the Raman spectra in disordered and amorphous carbon is given, and the nature of the G and D vibration modes in graphite is analyzed in terms of the resonant excitation of \ensuremath{\pi} states and the long-range polarizability of the long range bonding.
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Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
Xuesong Li,Weiwei Cai,Jinho An,Seyoung Kim,Junghyo Nah,Dongxing Yang,Richard D. Piner,Aruna Velamakanni,Inhwa Jung,Emanuel Tutuc,Sanjay K. Banerjee,Luigi Colombo,Rodney S. Ruoff +12 more
TL;DR: It is shown that graphene grows in a self-limiting way on copper films as large-area sheets (one square centimeter) from methane through a chemical vapor deposition process, and graphene film transfer processes to arbitrary substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.