Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
Chi Chung Ling,W. K. Mui,C. H. Lam,C. D. Beling,S. Fung,M. K. Lui,Kok Wai Cheah,King Fai Li,Yang Zhao,M. Gong +9 more
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TLDR
In this article, annealing studies were performed to study undoped p-type gallium antimonide materials and a 314 ps positron lifetime component was attributed to Ga vacancy (V-Ga) related defect.Abstract:
Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (V-Ga) related defect. Isochronal annealing studies showed at 300 degreesC annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (similar to2x10(17) cm(-3)) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the V-Ga defect, at least for cases with annealing temperatures above 300 degreesC, V-Ga is not the acceptor responsible for the p-type conduction. (C) 2002 American Institute of Physics.read more
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Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide
TL;DR: In this paper, the acceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS).
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Gallium antisite defect and residual acceptors in undoped GaSb
TL;DR: In this paper, the positron lifetime spectroscopy (PAS) and the coincident Doppler broadening (CDB) technique were combined to identify Ca vacancy (V-Ga) related defects by combining the CDB measurements.
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Thermally stable photoluminescence and long persistent luminescence of Ca3Ga4O9:Tb3+/Zn2+
TL;DR: In this article, a green long persistent luminescence (LPL) phosphor Ca3Ga4O9:Tb3+/Zn2+ was prepared.
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The intrinsic relationship between the kink-and-tail and box-shaped zinc diffusion profiles in n-GaSb
TL;DR: Zhang et al. as mentioned in this paper found that the Ga atoms from the diffusion sources suppressed the formation of the high-concentration surface diffusion fronts in Zn profiles, thus converting the kink-and-tail-shaped profile to the box-shape profile.
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Native defects and self-diffusion in GaSb
TL;DR: In this article, the authors compared the results of Bracht et al. and Weiler and Mehrer (Weiler D, Mehrer H 1984 Phil. Mag. Appl. 89 5393) with the results obtained by Bracht and Nicols.
References
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Program system for analysing positron lifetime spectra and angular correlation curves
Journal ArticleDOI
The physics and technology of gallium antimonide: An emerging optoelectronic material
TL;DR: The 3-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb is a promising material for high speed electronic and long wavelength photonic devices.
Book
Positron annihilation in semiconductors : defect studies
R. Krause-Rehberg,H. S. Leipner +1 more
TL;DR: In this article, the authors compare Positron annihilation with other defect-sensitive techniques, such as defect characterisation in III-V and II-VI compounds, and compare them with other techniques.
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Gallium antimonide device related properties
TL;DR: The physical properties of GaSb are briefly presented and the device implications reviewed in this paper, where a direct gap semiconductor (0.72 eV) capable of being doped either p or n type with good mobilities and it has significant electrooptical potential in the near IR range.
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A photoluminescence and Hall‐effect study of GaSb grown by molecular‐beam epitaxy
TL;DR: In this article, an intentionally doped gallium antimonide has been grown by molecular beam epitaxy on gallium arsenide and gallium anti-antimonide, and a strong correlation has been found between the quality of the layers and the degree of excess antimony flux; the best material was obtained with the minimum antimony stable growth at a particular substrate temperature.