Journal ArticleDOI
GaN-based light-emitting diodes on various substrates: a critical review.
Reads0
Chats0
TLDR
This review focuses on state-of-the-art high-performance GaN-based LED materials and devices on unconventional substrates, and speculation on the prospects for LEDs on unconventional substrate is speculated.Abstract:
GaN and related III-nitrides have attracted considerable attention as promising materials for application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present, sapphire is still the most popular commercial substrate for epitaxial growth of GaN-based LEDs. However, due to its relatively large lattice mismatch with GaN and low thermal conductivity, sapphire is not the most ideal substrate for GaN-based LEDs. Therefore, in order to obtain high-performance and high-power LEDs with relatively low cost, unconventional substrates, which are of low lattice mismatch with GaN, high thermal conductivity and low cost, have been tried as substitutes for sapphire. As a matter of fact, it is not easy to obtain high-quality III-nitride films on those substrates for various reasons. However, by developing a variety of techniques, distincts progress has been made during the past decade, with high-performance LEDs being successfully achieved on these unconventional substrates. This review focuses on state-of-the-art high-performance GaN-based LED materials and devices on unconventional substrates. The issues involved in the growth of GaN-based LED structures on each type of unconventional substrate are outlined, and the fundamental physics behind these issues is detailed. The corresponding solutions for III-nitride growth, defect control, and chip processing for each type of unconventional substrate are discussed in depth, together with a brief introduction to some newly developed techniques in order to realize LED structures on unconventional substrates. This is very useful for understanding the progress in this field of physics. In this review, we also speculate on the prospects for LEDs on unconventional substrates.read more
Citations
More filters
Journal ArticleDOI
Flexible and Stretchable Smart Display: Materials, Fabrication, Device Design, and System Integration
TL;DR: In this paper, the development of high performance light-emitting devices with flexible and stretchable form factors is described. But the development is mainly achieved by replacing the rigid materials in the device components with flex...
Journal ArticleDOI
High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN
Lei Liu,Chao Yang,Amalia Patanè,Zhiguo Yu,Faguang Yan,Kaiyou Wang,Hongxi Lu,Jinmin Li,Lixia Zhao +8 more
TL;DR: High detectivity along with a simple fabrication process endows these laterally mesoporous GaN photodetectors with great potential for applications that require selective detection of weak optical signals in the UV range.
Journal ArticleDOI
Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix.
Wanqing Meng,Fei-Fan Xu,Zhihao Yu,Zhihao Yu,Tao Tao,Liangwei Shao,Lei Liu,Taotao Li,Kaichuan Wen,Jianpu Wang,Longbing He,Litao Sun,Weisheng Li,Hongkai Ning,Ningxuan Dai,Feng Qin,Xuecou Tu,Danfeng Pan,Shuzhuan He,Dabing Li,Youdou Zheng,Yanqing Lu,Bin Liu,Rong Zhang,Yi Shi,Xinran Wang +25 more
TL;DR: In this paper, the integration of large-area MoS2 thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a back-end of line (BEOL) process and demonstrate high-resolution displays is presented.
Journal ArticleDOI
Structures, mobility and electronic properties of point defects in arsenene, antimonene and an antimony arsenide alloy
TL;DR: In this paper, the structural stability, mobility and electronic properties of typical point defects in 2D arsenene, antimonene, and antimony arsenide were investigated, including the Stone-Wales defects, single vacancies, double vacancies, and adatoms.
Journal ArticleDOI
Van der Waals Epitaxy of III-Nitride Semiconductors Based on 2D Materials for Flexible Applications
Jiadong Yu,Lai Wang,Zhibiao Hao,Yi Luo,Changzheng Sun,Jian Wang,Yanjun Han,Bing Xiong,Hongtao Li +8 more
TL;DR: In this progress report, the recent advances in the different strategies for the growth of III-nitrides based on 2D materials are reviewed, with a focus on van der Waals epitaxy and transfer printing.
References
More filters
Book
Handbook of Optical Constants of Solids
TL;DR: In this paper, E.D. Palik and R.R. Potter, Basic Parameters for Measuring Optical Properties, and W.W.Hunter, Measurement of Optical Constants in the Vacuum Ultraviolet Spectral Region.
Journal ArticleDOI
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Abstract: Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs
Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Journal ArticleDOI
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.