Growth and characteristics of ultralow threshold 1.45 μm metamorphic InAs tunnel injection quantum dot lasers on GaAs
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In this paper, the molecular beam epitaxial growth and characteristics of 1.45μm metamorphic InAs quantum dot tunnel injection lasers on GaAs have been studied under optimized growth conditions, the quantum dots exhibit photoluminescence linewidths ∼30meV and high intensity at room temperature.Abstract:
The molecular beam epitaxial growth and characteristics of 1.45μm metamorphic InAs quantum dot tunnel injection lasers on GaAs have been studied. Under optimized growth conditions, the quantum dots exhibit photoluminescence linewidths ∼30meV and high intensity at room temperature. The lasers are characterized by ultralow threshold current (63A∕cm2), large frequency response (f−3dB=8GHz), and near-zero α parameter and chirp.read more
Citations
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References
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Journal ArticleDOI
Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
H.Y. Liu,Ian R. Sellers,Tom J. Badcock,D. J. Mowbray,M. S. Skolnick,Kristian M. Groom,Marina Gutierrez,Mark Hopkinson,Jo Shien Ng,John P. R. David,Richard Beanland +10 more
TL;DR: In this paper, the use of a high growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm self-assembled InAs∕InGaAs dot-in-a-well lasers.
Journal ArticleDOI
Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers
P. K. Bhattacharya,S. Ghosh,S. Pradhan,Jasprit Singh,Zong-Kwei Wu,J. Urayama,Kyoungsik Kim,Theodore B. Norris +7 more
TL;DR: In this paper, a pump-probe differential transmission spectroscopy (DTS) measurement was performed on In/sub 0.4/Ga/sub0.6/As-GaAs-AlGaAs heterostructures, which showed that injected electrons preferentially occupied the excited states in the dots and states in barriers layers.
Journal ArticleDOI
High-speed 1.3μm tunnel injection quantum-dot lasers
TL;DR: In this article, a tunnel injection quantum-dot laser is demonstrated, where self-organized quantum dots are p doped to optimize the gain, and the laser is characterized by Jth=180A∕cm2, T0=∞, dg∕dn≈1×10−14cm2.
Journal ArticleDOI
High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range
N. N. Ledentsov,A. R. Kovsh,A. E. Zhukov,Nikolay A. Maleev,S. S. Mikhrin,A. P. Vasil’ev,Elizaveta Semenova,Mikhail V. Maximov,Yu. M. Shernyakov,N. V. Kryzhanovskaya,V. M. Ustinov,Dieter Bimberg +11 more
TL;DR: Stacked InAs/InGaAs quantum dots are used as an active media of metamorphic InGaAs-InGaAlAs lasers grown on GaAs substrates by molecular beam epitaxy as discussed by the authors.
Journal ArticleDOI
High-speed quantum dot lasers
TL;DR: In this article, the authors describe 1.1 and 1.3 µm p-doped tunnel injection self-organized In(Ga)As quantum dot (QD) laser emitting at 1.2 × 10−16 cm3.
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