Journal ArticleDOI
High-Performance Gate-Enhanced Power UMOSFET With Optimized Structure
Ying Wang,Hai-fan Hu,Wenli Jiao +2 more
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TLDR
In this article, an optimized gate-enhanced (GE) power UMOSFET with split gate (SGE-UMOS) was proposed, which shows the reduction in specific on-state resistance (Rsp) at a breakdown voltage of 119 V as compared to the gradient oxide-bypassed (GOB) UMOS and GE-UMMS devices, which is due to the higher N-type concentration in the drift region.Abstract:
An optimized gate-enhanced (GE) power UMOSFET with split gate (SGE-UMOS) is proposed. This device shows the reduction in specific on-state resistance (Rsp) at a breakdown voltage of 119 V as compared to the gradient oxide-bypassed (GOB) UMOS and GE-UMOS devices, which is due to the higher N-type concentration in the drift region. In addition, the split-gate floating structure in SGE-UMOS also reduces the gate-source electrode parasitic capacitor. The numerical simulation results indicate that the proposed device features high performance with improved Rsp and Qg as compared to that of the GOB-UMOS and GE-UMOS devices.read more
Citations
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Journal ArticleDOI
A Review of Superjunction Vertical Diffused MOSFET
TL;DR: Superjunction has arguably been the most creative and important concept in power device field Superjunction vertical diffused MOSFET (SJ VDMOS) has been commercialized and the research effort to l
Journal ArticleDOI
A Split Triple-Gate Power LDMOS With Improved Static-State and Switching Performance
TL;DR: In this article, a novel split triple-gate (STG) LDMOS is proposed to improve static-state and switching performances, which consists of planar part and trench part, and the SGs are embedded into the drift region.
Journal ArticleDOI
Split-Gate-Enhanced UMOSFET With an Optimized Layout of Trench Surrounding Mesa
Ying Wang,Hai-fan Hu,Wenli Jiao +2 more
TL;DR: In this article, an optimized split-gate-enhanced UMOSFET (SGE-UMOS) layout design is proposed, and its mechanism is investigated by 2-D and 3-D simulations.
Journal ArticleDOI
Split gate SOI trench LDMOS with low-resistance channel
TL;DR: In this paper, a split gate SOI trench LDMOS with low on-resistance channel (SGTL-LDMOS) structure was proposed and the low-Resistance channel was introduced to further reduce the specific on-state resistance (Ron,sp).
Journal ArticleDOI
Split-Gate-Enhanced Power UMOSFET With Soft Reverse Recovery
TL;DR: In this article, a split-gate-enhanced power UMOSFET integrated with Schottky element is studied, which achieves a low forward voltage drop of 0.48 V, around 28% lower than the 0.78 V of an SGE-UMOS.
References
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Journal ArticleDOI
Tunable oxide-bypassed trench gate MOSFET: breaking the ideal superjunction MOSFET performance line at equal column width
TL;DR: In this article, a tunable oxide-bypassed (TOB) superjunction MOSFET with 79 V rating has been successfully fabricated for the first time, achieving a column width of 3.5 /spl mu/m.
Journal ArticleDOI
Reduction of parasitic capacitance in vertical MOSFETs by spacer local oxidation
V.D. Kunz,T. Uchino,C.H. de Groot,Peter Ashburn,D. Donaghy,Steve Hall,Yun Wang,P.L.F. Hemment +7 more
TL;DR: In this article, a self-aligned process was developed to reduce the parasitic overlap capacitance in vertical MOSFETs using nitride spacers on the sidewalls of the trench or pillar and a local oxidation.
Journal ArticleDOI
Design of Gradient Oxide-Bypassed Superjunction Power MOSFET Devices
TL;DR: In this article, a gradient oxide-bypassed (GOB) structure was proposed to improve the performance of the p-n column superjunction power devices. But, the performance is limited due to the difficulty in forming perfect charge-balanced p-N columns by the current process technology.
Journal ArticleDOI
Theoretical Analyses of Oxide-Bypassed Superjunction Power Metal Oxide Semiconductor Field Effect Transistor Devices
TL;DR: In this paper, the performance of oxide-bypassed (OB) and gradient OB (GOB) structures with slanted oxide sidewalls has been analyzed in closed-form equations.
Journal ArticleDOI
A simple technology for superjunction device fabrication: polyflanked VDMOSFET
TL;DR: In this paper, a feasible technology for poly-flanked vertical double-diffused superjunction (SJ) structure, as in Gan et al. (2001), is introduced and demonstrated to have greatly reduced fabrication costs, simplified processes, and overcome the interdiffusion problem of SJ columns.