Journal ArticleDOI
A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate
TLDR
In this article, a split-gate deep-trench MOSFET (DT-MOS) with its split gate self-biased to an integrated low voltage supply is proposed.Abstract:
A split-gate deep-trench MOSFET (DT-MOS) with its split gate self-biased to an integrated low voltage supply is proposed. Due to the split gate being biased to an approximately constant voltage, this structure has a smaller amount of gate-to-drain charge Qgd without increase in the specific on-resistance Ron, compared with the conventional DT-MOS. Numerical simulation results show that the figure of merit (FOM = Qgd ·Ron) is largely reduced, compared with that of the conventional DT-MOS.read more
Citations
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Proceedings ArticleDOI
Adaptive dv/dt and di/dt control for isolated gate power devices
TL;DR: In this paper, an adaptive gate control technique and a driver concept for isolated gate power devices is proposed to control the gate current of the power devices to control dv/dt and di/dt during a switching transition.
Journal ArticleDOI
An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss
TL;DR: In this paper, an improved 4H-SiC U-shaped trench-gate metal-oxide-semiconductor field effect transistors (UMOSFETs) structure with low ON-resistance and switching energy loss is proposed.
Journal ArticleDOI
A Split Triple-Gate Power LDMOS With Improved Static-State and Switching Performance
TL;DR: In this article, a novel split triple-gate (STG) LDMOS is proposed to improve static-state and switching performances, which consists of planar part and trench part, and the SGs are embedded into the drift region.
Journal ArticleDOI
Split-Gate-Enhanced UMOSFET With an Optimized Layout of Trench Surrounding Mesa
Ying Wang,Hai-fan Hu,Wenli Jiao +2 more
TL;DR: In this article, an optimized split-gate-enhanced UMOSFET (SGE-UMOS) layout design is proposed, and its mechanism is investigated by 2-D and 3-D simulations.
Journal ArticleDOI
High-Performance Split-Gate-Enhanced UMOSFET With Dual Channels
TL;DR: In this article, an optimized split-gate-enhanced trench MOSFET with dual channels (DSGE-UMOS) is presented, where an n-type buffer layer is added between the epitaxial layer and substrate layer.
References
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Patent
Power semiconductor devices having improved high frequency switching and breakdown characteristics
TL;DR: The use of the trench-based source electrode instead of a larger gate electrode reduces the gate-to-drain capacitance (CGD) of the UMOSFET and improves switching speed by reducing the amount of gate charging and discharging current that is needed during high frequency operation.
Proceedings ArticleDOI
A new power W-gated trench MOSFET (WMOSFET) with high switching performance
Mohamed N. Darwish,Christina Yue,Kam Hong Lui,Frederik P. Giles,Ben Chan,Kuo-In Chen,Deva Pattanayak,Qufei Chen,Kyle Santa Clara Terrill,King Owyang +9 more
TL;DR: In this paper, a power trench MOSFET with W-shaped gate structure is presented, which demonstrates a significant reduction in gate-drain charge Qgd, a low on-resistance, and good production process margin.
Patent
Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge
TL;DR: The cellular structure of the power device includes a substrate that has a highly doped drain region and a more lightly doped epitaxial layer of the same doping over the substrate as mentioned in this paper.
Proceedings ArticleDOI
Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge
TL;DR: In this paper, a split-gate version of the resurf stepped oxide (RSO) MOSFET was presented, which achieved a record on-resistance of 3.8 mOmegamm2 and gate-to-drain charge of 0.9 nC.
Journal ArticleDOI
Gate-drain charge analysis for switching in power trench MOSFETs
TL;DR: In this article, the authors analyzed the switching behavior in power trench MOSFETs by using experiments and simulations, focusing on the charge density Q/sub gd/, which can be used for further optimization of these devices.