High-speed black phosphorus field-effect transistors approaching ballistic limit.
Xuefei Li,Zhuoqing Yu,Xiong Xiong,Tiaoyang Li,Tingting Gao,Runsheng Wang,Ru Huang,Yanqing Wu,Yanqing Wu +8 more
TLDR
It is shown that the transport properties of BP device under high electric field can be improved greatly by the interface engineering of high-quality HfLaO dielectrics and transport orientation and by designing the device channels along the lower effective mass armchair direction.Abstract:
As a strong candidate for future electronics, atomically thin black phosphorus (BP) has attracted great attention in recent years because of its tunable bandgap and high carrier mobility. Here, we show that the transport properties of BP device under high electric field can be improved greatly by the interface engineering of high-quality HfLaO dielectrics and transport orientation. By designing the device channels along the lower effective mass armchair direction, a record-high drive current up to 1.2 mA/μm at 300 K and 1.6 mA/μm at 20 K can be achieved in a 100-nm back-gated BP transistor, surpassing any two-dimensional semiconductor transistors reported to date. The highest hole saturation velocity of 1.5 × 107 cm/s is also achieved at room temperature. Ballistic transport shows a record-high 36 and 79% ballistic efficiency at room temperature and 20 K, respectively, which is also further verified by theoretical simulations.read more
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References
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Black phosphorus field-effect transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
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Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
Fengnian Xia,Han Wang,Yichen Jia +2 more
TL;DR: Black phosphorus (BP), the most stable allotrope of phosphorus with strong intrinsic in-plane anisotropy, is reintroduced to the layered-material family and shows great potential for thin-film electronics, infrared optoelectronics and novel devices in which anisotropic properties are desirable.
Journal ArticleDOI
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Gianluca Fiori,Francesco Bonaccorso,Giuseppe Iannaccone,Tomas Palacios,Daniel Neumaier,Alan Seabaugh,Sanjay K. Banerjee,Luigi Colombo +7 more
TL;DR: A review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches and the performance limits and advantages, when exploited for both digital and analog applications.
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Carrier mobilities in silicon empirically related to doping and field
D.M. Caughey,R.E. Thomas +1 more
TL;DR: In this article, the experimental dependence of carrier mobilities on doping density and field strength in silicon has been investigated and the curve-fitting procedures are described, which fit the experimental data.
Journal ArticleDOI
Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors
Michele Buscema,Dirk J. Groenendijk,Sofya I. Blanter,Gary A. Steele,Herre S. J. van der Zant,Andres Castellanos-Gomez +5 more
TL;DR: The ambipolar behavior coupled to the fast and broadband photodetection make few-layer black phosphorus a promising 2D material for photodetsection across the visible and near-infrared part of the electromagnetic spectrum.
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