High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination
TLDR
In this paper, 1 kV 4H and 6 h SiC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination were fabricated using Ni-SiC ohmic contact formation.Abstract:
We have fabricated 1 kV 4H and 6H SiC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination. This simple structure when used with a high barrier height metal such as Ni has consistently given us good yield of Schottky diodes with breakdown voltages in excess of 60% of the theoretically calculated value. This paper presents the design considerations, the fabrication procedure, and characterization results for these 1 kV Ni-SiC Schottky diodes. Comparison to similarly fabricated Pt-SiC Schottky diodes is reported. The Ni-SiC ohmic contact formation has been studied using Auger electron spectroscopy and X-ray diffraction. The characterization study includes measurements of current-voltage (I-V) temperature and capacitance-voltage (C-V) temperature characteristics. The high-temperature performance of these diodes has also been investigated. The diodes show good rectifying behavior with ON/OFF current ratios, ranging from 10/sup 6/ to 10 at 27/spl deg/C and in excess of 10/sup 6/ up to 300/spl deg/C.read more
Citations
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Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes
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References
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Extraction of Schottky diode parameters from forward current-voltage characteristics
S. K. Cheung,N. W. Cheung +1 more
TL;DR: In this article, the forward current densityvoltage (J•V) characteristics of a Schottky diode were used to determine the ideality factor n, the barrier height φB, and the series resistance R of the diode with one single I•V measurement.
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C.R. Crowell,S.M. Sze +1 more
TL;DR: In this paper, a theory for calculating the magnitude of majority carrier current flow in metal-semiconductor barriers is developed which incorporates Schottky's diffusion (D) theory and Bethe's thermionic emission (T) theory into a single T-D emission theory, and which includes the effects of the image force.
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Charles E. Weitzel,John W. Palmour,C.H. Carter,K. Moore,K.K. Nordquist,S. Allen,Christine Thero,Mohit Bhatnagar +7 more
TL;DR: In this paper, a wide variety of SiC devices are compared to that of similar Si and GaAs devices and to theoretically expected results, and the performance of these devices is compared to the expected results.
Journal ArticleDOI
High performance of high-voltage 4H-SiC Schottky barrier diodes
TL;DR: In this paper, the performance of high-voltage rectifiers using 4H-SiC Schottky barrier diodes was investigated. And the barrier heights of these contact metals, Au, Ni, and Ti were determined by the analysis of currentvoltage characteristics, and the reduction of power loss could be achieved by controlling the barrier height.
Journal ArticleDOI
Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination
TL;DR: In this paper, the edge termination of Ti/4H-SiC Schottky rectifiers was successfully fabricated by using highly resistive layers at the periphery of Schotty contacts, which were formed by B/sup +/ implantation followed by heat treatment to improve the crystallinity of implanted layers.