Journal ArticleDOI
Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs
TLDR
In this paper, the effect of proton irradiation on MOSFETs performance was investigated through basic and analog parameters considering four different splits, i.e., unstrained, uniaxial, bao-linear, uni-expansions, and u-dual.Abstract:
In this work the proton irradiation influence on Multiple Gate MOSFETs (MuGFETs) performance is investigated. This analysis was performed through basic and analog parameters considering four different splits (unstrained, uniaxial, biaxial, uniaxial+biaxial). Although the influence of radiation is more pronounced for p-channel devices, in pMuGFETs devices, the radiation promotes a higher immunity to the back interface conduction resulting in the analog performance improvement. On the other hand, the proton irradiation results in a degradation of the post-irradiated n-channel transistors behavior. The unit gain frequency showed to be strongly dependent on stress efficiency and the radiation results in an increase of the unit gain frequency for splits with high stress effectiveness for both cases p- and nMuGFETs.read more
Citations
More filters
Proceedings ArticleDOI
Potential and limitations of UTBB SOI for advanced CMOS technologies
TL;DR: In this paper, the potential of ultra-thin body and buried oxide (UTBB) technologies for digital, analog, and memory applications is discussed, with the focus on low frequency noise and radiation hardness aspects.
Proceedings ArticleDOI
Influence of proton radiation and strain on nFinFET zero temperature coefficient
Vinicius M. Nascimento,Paula Ghedini Der Agopian,L. M. Almeida,Caio C. M. Bordallo,Eddy Simoen,Cor Claeys,Joao Antonio Martino +6 more
TL;DR: In this paper, the effect of proton radiation and strain on the zero temperature coefficient (ZTC) in SOI nFinFETs was studied. But the authors focused on the impact of the VZTC bias point on the performance of the FET.
Journal ArticleDOI
Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view
Paula Ghedini Der Agopian,Paula Ghedini Der Agopian,Henrique Lanza Faria Torres,Joao Antonio Martino,Rita Rooyackers,Eddy Simoen,C. Claeys,Nadine Collaert +7 more
TL;DR: In this article, the total ionizing dose degradation of 600 keV proton-irradiated silicon triple gate SOI tunnel FETs (TFETs) with SOI FinFETs fabricated with the same structure on the same wafer was compared.
Proceedings ArticleDOI
Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency
Luis Felipe Vicentis Caparroz,Joao Antonio Martino,Eddy Simoen,Cor Claeys,Paula Ghedini Der Agopian +4 more
TL;DR: In this article, the authors study the effect of proton radiation on SOI analog parameters based on the device inversion coefficient (IC) and define an optimal analog condition by basing the analysis on the inversion coefficients, even considering the radiation impact.
Journal ArticleDOI
Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation
Bruna Ramos de Sousa,Alexandro de M. Nogueira,Paula Ghedini Der Agopian,Joao Antonio Martino +3 more
TL;DR: In this paper, the influence of proton-irradiation in the voltage gain of two-stage operational transconductance amplifier (OTA) designed with silicon-on-insulator (SOI) fin field effect transistors (FinFETs) is studied.
References
More filters
Proceedings ArticleDOI
Evaluation of device parameters of HfO/sub 2//SiO/sub 2//Si gate dielectric stack for MOSFETs
TL;DR: HfO/sub 2/ has the potential to satisfy the projected off-state leakage current requirements of future high-performance and low-power technologies.
Proceedings ArticleDOI
DIBL performance of 60 MeV proton-irradiated SOI MuGFETs
Paula Ghedini Der Agopian,Joao Antonio Martino,Daisuke Kobayashi,M Poizat,Eddy Simoen,Cor Claeys +5 more
TL;DR: In this article, the impact of 60 MeV proton irradiation on the drain induced barrier lowering was investigated for tri-gate FinFETs processed with and without the implementation of different biaxial or uniaxia strain engineering techniques, which may be associated with the radiation induced charges in the buried oxide and the influence of the back channel on the front transistor performance.