Journal ArticleDOI
Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs
TLDR
In this paper, the effect of proton irradiation on MOSFETs performance was investigated through basic and analog parameters considering four different splits, i.e., unstrained, uniaxial, bao-linear, uni-expansions, and u-dual.Abstract:
In this work the proton irradiation influence on Multiple Gate MOSFETs (MuGFETs) performance is investigated. This analysis was performed through basic and analog parameters considering four different splits (unstrained, uniaxial, biaxial, uniaxial+biaxial). Although the influence of radiation is more pronounced for p-channel devices, in pMuGFETs devices, the radiation promotes a higher immunity to the back interface conduction resulting in the analog performance improvement. On the other hand, the proton irradiation results in a degradation of the post-irradiated n-channel transistors behavior. The unit gain frequency showed to be strongly dependent on stress efficiency and the radiation results in an increase of the unit gain frequency for splits with high stress effectiveness for both cases p- and nMuGFETs.read more
Citations
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DissertationDOI
Estudo do ponto invariante com a temperatura (ZTC) em SOI-FInFETS tensionados e radiados.
TL;DR: In this article, the invariant point with temperature (ZTC) was analyzed for transistors made with SOI FinFET structure in relation to the mechanical stress and irradiation effects, through of the use of experimental data and an analytical model.
DissertationDOI
Efeito da radiação em transistores 3D em baixas temperaturas.
TL;DR: In this paper, the effects of total ionization dose on SOI FinFET devices were studied, and the tradeoff analysis between three analog parameters: the transistor efficiency (gm/ID), the unit gain frequency (fT), and the intrinsic voltage gain (AV).
References
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Book
Silicon-on-Insulator Technology: Materials to VLSI
TL;DR: In this paper, the authors present a set of techniques for defect detection in SOI materials, including the following: 2.1.1 Silicon-on-Zirconia (SOZ), 2.2.2 E-beam recrystallization, 2.3.3, 3.4.4, and 3.5.5 Other defect assessment techniques.
Journal ArticleDOI
Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's
Hyung-Kyu Lim,Jerry G. Fossum +1 more
TL;DR: In this article, the charge coupling between the front and back gates of thin-film silicon-on-insulator (SOI) MOSFETs is analyzed, and closed-form expressions for the threshold voltage under all possible steady-state conditions are derived.
Journal ArticleDOI
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
TL;DR: In this paper, a detailed theoretical model for the physics of strain effects in bulk semiconductors and surface Si, Ge, and III-V channel metal-oxide-semiconductor field effect transistors is presented.
Book
Radiation Effects in Advanced Semiconductor Materials and Devices
Cor Claeys,Eddy Simoen +1 more
TL;DR: In this paper, the basic radiation damage mechanism in Semiconductor Materials and Devices and Displacement Damage in Group IV and Group III Semiconductors are discussed. And GaAs Based Field Effect Transistors for Radiation-Hard Applications.
Journal ArticleDOI
Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs
F. El Mamouni,En Xia Zhang,Ronald D. Schrimpf,Daniel M. Fleetwood,Robert A. Reed,Sorin Cristoloveanu,Weize Xiong +6 more
TL;DR: The dependence of the subthreshold-swing degradation on fin width is reported for irradiated 100-nm-gate-length, fully depleted n-channel FinFETs in this paper.