Journal ArticleDOI
Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
B. Dierickx,Dirk Wouters,Geert Willems,A. Alaerts,I. Debusschere,Eddy Simoen,J. Vlummens,H. Akimoto,Cor Claeys,Herman Maes,L. Hermans,Erik H.M. Heijne,Pierre Jarron,Francis Anghinolfi,M. Campbell,F. Pengg,P. Aspell,L. Bosisio,Ettore Focardi,F. Forti,S. Kashigin,A. Mekkaoui,M.C. Habrard,D. Sauvage,P. Delpierre +24 more
- Vol. 40, Iss: 4, pp 753-758
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TLDR
In this paper, a new approach to monolithic pixel detectors, based on silicon on insulator (SOI) wafers with high resistivity substrate, is pursued by the CERN RD19 collaboration.Abstract:
A new approach to monolithic pixel detectors, based on silicon on insulator (SOI) wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. The fabrication methods and the results of the electrical evaluation of the SOI-MOSFET devices and of the detector structures fabricated in the bulk are reported. The leakage current of the high-resistivity PIN-diodes is kept of the order of 5 to 10 nA/cm/sup 2/. The SOI preparation processes employed-SIMOX (separation by implantation of oxygen) and ZMR (zone melting recrystallization)-produce working electronic circuits, and appear to be compatible with the fabrication of detectors of suitable quality. >read more
Citations
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Journal ArticleDOI
The low-frequency noise behaviour of silicon-on-insulator technologies
Eddy Simoen,Cor Claeys +1 more
TL;DR: In this paper, the low-frequency noise behavior of devices fabricated in silicon-on-insulator technologies is described and illustrated by experimental results, mainly obtained on MOSFETs.
Design and Characterization of 64K Pixels Chips Working in Single Photon Processing Mode
TL;DR: In this paper, the design of a single photon counting detector for X-ray imaging was studied, using CMOS technology and in fine pitch bump bonding, which has made it possible for the development of high granularity detectors.
Journal ArticleDOI
Semiconductor micropattern pixel detectors: a review of the beginnings
TL;DR: In this paper, the authors used a hybrid semiconductor-micropattern-or "reactive" pixel detector for particle physics tracking in particle physics and achieved a tracking precision from 6 to 14 μm, and using analog interpolation one came close to 1 μm.
Journal ArticleDOI
Semiconductor particle tracking detectors
TL;DR: The last decade has seen substantial progress in the use of solid state detectors, which are now exploited on a large scale in high energy physics experiments for precise positional measurements as mentioned in this paper, and the major classes of detector and the methods employed to construct them and instrument the large systems presently in use for particle tracking.
Journal ArticleDOI
Radiation effects in silicon-on-insulator transistors with back-gate control method fabricated with OKI Semiconductor 0.20 μm FD-SOI technology
M. Kochiyama,T. Sega,Kazuhiko Hara,Yasuo Arai,Toshinobu Miyoshi,Yoichi Ikegami,Susumu Terada,Yoshinobu Unno,Koichi Fukuda,Masao Okihara +9 more
TL;DR: Using UNIBOND wafers, a set of PMOS and NMOS transistors were irradiated with protons in order to investigate the total ionization dose effect in transistor operation as mentioned in this paper.
References
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Journal ArticleDOI
Microwave performance of SOI n-MOSFETs and coplanar waveguides
TL;DR: In this paper, the performance of 1- mu m gate-length n-MOSFETs fabricated on both SIMOX and BESOI substrates was measured.
Journal ArticleDOI
An IC-compatible detector process
TL;DR: In this paper, a silicon radiation detector fabrication process which exploits the excellent gettering properties of a backside layer of phosphorous-doped polysilicon has been developed and characterized.
a New Integrated Pixel Detector for High Energy Physics
TL;DR: In this article, integrated pixel devices having the high resistivity, signal-charge collecting volume and readout circuitry in a single piece of silicon have been fabricated, and the integration of detecting elements and circuitry is carried out by building the circuitry on top of the detecting elements, maximizing spatial resolution.
Journal ArticleDOI
A new integrated pixel detector for high energy physics
TL;DR: In this paper, integrated pixel devices having the high resistivity, signal-charge collecting volume and readout circuitry in a single piece of silicon have been fabricated, and the integration of detecting elements and circuitry is carried out by building the circuitry on top of the detecting elements, maximizing spatial resolution.
Journal ArticleDOI
New concepts for integrated solid state detector electronics
TL;DR: In this paper, the authors discuss several alternatives for the practical realization of fully integrated detector-electronics circuits on high resistivity material and explore the concept of full integration in detail.