Proceedings ArticleDOI
Interface quality of SOI MOSFET's reflected in noise and mobility
Jian Chen,A. Lee,P. Fang,R. Solomon,T. Chan,P. Ko,Chenming Hu +6 more
- pp 100-101
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TLDR
In this paper, the trap density of both front and back interfaces of SOI (silicon-on-insulator) devices is estimated using low frequency noise measurement. And the authors present the complete set of effective mobilities for both n- and p-channel SOI MOSFETs at both the front and the back channels and relate them to the trap densities.Abstract:
The trap density of both front and back interfaces of SOI (silicon-on-insulator) devices is estimated using low frequency noise measurement. The authors present the complete set of effective mobilities for both n- and p-channel SOI MOSFETs at both the front and back channels and relate them to the trap densities. It is found that the interface qualities of the front and back sides are similar in SIMOX (separation by implanted oxygen) SOI MOSFETs from the noise and mobility standpoint. The very low field effective mobility of SOI NMOS is lower than that of bulk NMOS due to increased interface trap densities for SOI devices and the effective mobility of the edge transistor is lower. >read more
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Journal ArticleDOI
A low-frequency noise study of gate-all-around SOI transistors
TL;DR: In this paper, the low-frequency noise characteristics of both n- and p-type gate-all-around (GAA) MOS transistors are reported and compared with the noise behavior of conventional, partially depleted (PD) SOI transistors.
Journal ArticleDOI
Combined low-frequency noise and random telegraph signal analysis of silicon MOSFET's
TL;DR: In this paper, a combined random telegraph signal (RTS) and low-frequency (LF) noise study is applied to partially depleted (PD) metal-oxide-semiconductor transistors (MOST's) processed on SIMOX substrates.
Journal ArticleDOI
Study of Temperature Effect on Analog/RF and Linearity Performance of Dual Material Gate (DMG) Vertical Super-Thin Body (VSTB) FET
TL;DR: In this paper, a simulation study of the influence of temperature on the performance of dual material gate (DMG) vertical super-thin body (VSTB) FET is presented.
Journal ArticleDOI
Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors
TL;DR: In this article, the back channel low-frequency noise of SOI nMOS transistors was measured as a function of frequency, back gate bias V/sub bg/ and temperature T.
References
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Journal ArticleDOI
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
S.C. Sun,James D. Plummer +1 more
TL;DR: In this paper, an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented, which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.
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Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states
TL;DR: In this paper, a modified trapping noise theory based on the McWhorter's assumptions and valid in all the working regimes is developed to account for this behavior, and excellent agreement is obtained with the variations of several parameters: gate and drain biases, geometry, oxide and depletion capacitance, temperature, and technologies.
Journal ArticleDOI
A physics-based MOSFET noise model for circuit simulators
TL;DR: In this article, a physics-based MOSFET noise model that can accurately predict the noise characteristics over the linear, saturation, and subthreshold operating regions is presented.
Journal ArticleDOI
Analysis of conduction in fully depleted SOI MOSFETs
TL;DR: In this paper, the conduction characteristics of fully depleted SOI MOSFETs studied by theoretical analysis and computer simulation are discussed, and the ideal inverse sub-threshold slope of 59.6 mV/decade is obtained if the interface-state capacitances are much smaller than the gate-oxide and silicon-film capacitance.
Journal ArticleDOI
Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's
TL;DR: Inversion-layer capacitance has been experimentally characterized and identified to be the main cause of the second-order thickness-dependence of MOSFET characteristics as discussed by the authors, and empirical equations for inversion layer capacitance and mobilities versus electric field are proposed.
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