Journal ArticleDOI
Luminescence enhancement in AlN(Er) by hydrogenation
Stephen J. Pearton,C. R. Abernathy,J. D. MacKenzie,Uwe Hommerich,X. Wu,Robert G. Wilson,Robert N. Schwartz,J. M. Zavada,Fan Ren +8 more
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TLDR
In this article, room-temperature Er3+ photoluminescence increases of a factor of 5 were observed for AlN(Er) samples treated in a 2H plasma at 200 °C for 30 min.Abstract:
Room-temperature Er3+ photoluminescence increases of a factor of 5 are observed for AlN(Er) samples treated in a 2H plasma at 200 °C for 30 min. The atomic deuterium passivates defects in the AlN, which normally provide alternative carrier recombination routes. Postdeuteration annealing at 300 °C for 20 min removes the luminescence enhancement by depassivating the nonradiative centers. The AlN(Er) provides a high degree of resistance to thermal quenching of luminescence as a function of temperature because of its wide band gap (6.2 eV), and hydrogenation is a simple method for maximizing the optical output in this materials system.read more
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Journal ArticleDOI
Intense ultraviolet cathodoluminescence at 318 nm from Gd3+-doped AlN
TL;DR: In this paper, Gd-implanted aluminum nitride was studied with cathodoluminescence (CL) as well as time-resolved CL in the temperature range 12-300 K.
Journal ArticleDOI
Synthesis and photoluminescence enhancement of Mn2+-doped ZnS nanocrystals
Song Wei Lu,Burtrand I. Lee,Zhong Lin Wang,W. Tong,B. K. Wagner,Wounjhang Park,Christopher J. Summers +6 more
TL;DR: In this article, a 30-fold increase in photoluminescence intensity has been observed from Mn 2+ -doped ZnS nanoparticles after surface passivation by a passivating agent with carboxylic functional groups.
Synthesis and photoluminescence enhancement of Mn 2+ -doped ZnS nanocrystals
Song Wei Lu,Burtrand I. Lee,Zhong Lin Wang,W. Tong,Brent K. Wagner,Wounjhang Park,Christopher J. Summers +6 more
TL;DR: In this article, a 30-fold increase in photoluminescence intensity has been observed from Mn 2+ -doped ZnS nanoparticles after surface passivation by a chemical precipitation method at room temperature.
Journal ArticleDOI
Optical and magnetic properties of Eu-doped GaN
Jennifer K. Hite,G. T. Thaler,R. Khanna,C. R. Abernathy,Stephen J. Pearton,Jae-Soung Park,Andrew J. Steckl,J. M. Zavada +7 more
TL;DR: In this paper, the photoluminescence (PL) in the red (622nm) of GaN films was investigated and the maximum PL intensity was obtained at a Ga flux of 3.6×10−7Torr.
Journal ArticleDOI
Green photoluminescence from Er-containing amorphous SiN thin films
TL;DR: In this article, green light emission at room temperature was achieved from nonhydrogenated amorphous silicon-nitrogen (a-SiN) thin films, which were deposited by cosputtering a silicon target covered with metallic erbium platelets in an Ar+N2 atmosphere.
References
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Book
Secondary ion mass spectrometry
TL;DR: In this paper, the analysis of polymers instrumentation imaging has been studied for depth profiling and semiconductor applications, as well as high temperature superconductors metallurgical applications.
Book
Hydrogen in crystalline semiconductors
TL;DR: A review of the properties of hydrogen in crystalline semiconductors is presented in this paper, together with the reactions of atomic hydrogen with shallow and deep level impurities that passivate their electrical activity.
Journal ArticleDOI
Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
TL;DR: In this paper, the luminescence of erbium implanted in various semiconductors such as Si, InP, GaAs, AlGaAs, GaInAsP, ZnTe and CdS is presented.
Journal ArticleDOI
Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon
Jurgen Michel,J. L. Benton,R. F. Ferrante,Dale Conrad Jacobson,D. J. Eaglesham,Eugene A. Fitzgerald,Ya-Hong Xie,J. M. Poate,Lionel C. Kimerling +8 more
TL;DR: In this paper, the effect of impurity coimplantation in MeV erbium-implanted silicon is studied and a significant increase in the intensity of the 1.54μm Er3+ emission was observed for different coimplants.
Journal ArticleDOI
Room‐temperature electroluminescence from Er‐doped crystalline Si
TL;DR: In this article, the authors obtained room temperature electroluminescence (EL) at ∼ 1.54 μm from Er and O co-doped crystalline pn Si diodes fabricated by ion implantation, under both forward and reverse bias conditions.