Journal ArticleDOI
Macrospin modeling of sub-ns pulse switching of perpendicularly magnetized free layer via spin-orbit torques for cryogenic memory applications
TLDR
In this paper, the magnetic reversal of a perpendicularly magnetized nanostructured free layer formed on a normal, heavy-metal nanostrip, subjected to spin-orbit torques generated by short (≤0.5Abstract:
We model, using the macrospin approximation, the magnetic reversal of a perpendicularly magnetized nanostructured free layer formed on a normal, heavy-metal nanostrip, subjected to spin-orbit torques (SOTs) generated by short (≤0.5 ns) current pulses applied to the nanostrip, to examine the potential for SOT-based fast, efficient cryogenic memory. Due to thermal fluctuations, if solely an anti-damping torque is applied, then, for a device with sufficiently low anisotropy ( Hanis0 ∼ 1 kOe) suitable for application in cryogenic memory, a high magnetic damping parameter ( α∼0.1−0.2) is required for reliable switching over a significant variation of pulse current. The additional presence of a substantial field-like torque improves switching reliability even for low damping ( α≤0.03).read more
Citations
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Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
Aurelien Manchon,J. Železný,Ioan Mihai Miron,Tomas Jungwirth,Jairo Sinova,André Thiaville,Kevin Garello,Pietro Gambardella +7 more
TL;DR: In this paper, the authors acknowledge support from the EU FET Open RIA Grant No 766566, the Ministry of Education of the Czech Republic Grant No LM2015087 and LNSM-LNSpin.
Journal Article
▲Current-induced effective field vector in Ta│CoFeB│MgO
TL;DR: In this article, the authors describe vector measurements of the current-induced effective field in Ta|CoFeB|MgO heterostructures and show that the effective field exhibits a significant dependence on the Ta and CoFeB layer thicknesses.
Journal ArticleDOI
Spatially and time-resolved magnetization dynamics driven by spin-orbit torques.
Manuel Baumgartner,Kevin Garello,Kevin Garello,Johannes Mendil,Can Onur Avci,Eva Grimaldi,Christoph Murer,Junxiao Feng,Mihai Gabureac,Christian Stamm,Yves Acremann,Simone Finizio,Sebastian Wintz,Jörg Raabe,Pietro Gambardella +14 more
TL;DR: The authors' measurements reveal how the magnetic symmetry is broken by the concerted action of the damping-like and field-like spin-orbit torques and the Dzyaloshinskii-Moriya interaction, and show that reproducible switching events can be obtained for over 1012 reversal cycles.
Journal ArticleDOI
Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO
TL;DR: In this article, the authors studied the device size dependence of spin-orbit torque induced magnetization switching in a Ta/CoFeB/MgO structure with perpendicular easy axis.
Journal ArticleDOI
Recent advances in spin-orbit torques: Moving towards device applications
TL;DR: The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as magnetic random access memories and boosted the spintronics research area as mentioned in this paper.
References
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Journal ArticleDOI
Spin-torque switching with the giant spin hall effect of tantalum
TL;DR: In this paper, a giant spin Hall effect (SHE) in β-tantalum was shown to generate spin currents intense enough to induce spin-torque switching of ferromagnets at room temperature.
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Thermal Fluctuations of a Single-Domain Particle
TL;DR: In this article, the Langevin equation of the Fokker-planck partial differential equation is replaced by a random-field term, which can be avoided by using the fluctuation-dissipation theorem.
Journal ArticleDOI
Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
Ioan Mihai Miron,Kevin Garello,Gilles Gaudin,Pierre-Jean Zermatten,Marius V. Costache,Stéphane Auffret,S. Bandiera,Bernard Rodmacq,Alain Schuhl,Pietro Gambardella +9 more
TL;DR: To prove the potential of in-plane current switching for spintronic applications, this work constructs a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures.
Journal Article
Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
Kevin Garello,Ioan Mihai Miron,Gilles Gaudin,Pierre-Jean Zermatten,Marius V. Costache,Stéphane Auffret,Sebastien Bandera,B. Rodmacq,Alain Schuhl,Pietro Gambardella +9 more
TL;DR: In this article, the authors demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature, which is composed of a thin cobalt layer with strong perpendicular magnetic anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers.