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Journal ArticleDOI

Mechanical properties of suspended graphene sheets

TLDR
In this article, the Young's modulus of stacks of graphene sheets suspended over photolithographically defined trenches in silicon dioxide was measured using an atomic force microscope, with measured spring constants scaling as expected with the dimensions of the suspended section, ranging from 1to5N∕m.
Abstract
Using an atomic force microscope, we measured effective spring constants of stacks of graphene sheets (less than 5) suspended over photolithographically defined trenches in silicon dioxide. Measurements were made on layered graphene sheets of thicknesses between 2 and 8nm, with measured spring constants scaling as expected with the dimensions of the suspended section, ranging from 1to5N∕m. When our data are fitted to a model for doubly clamped beams under tension, we extract a Young’s modulus of 0.5TPa, compared to 1TPa for bulk graphite along the basal plane, and tensions on the order of 10−7N.

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Penta-CN2 revisited: Superior stability, synthesis condition exploration, negative Poisson’s ratio and quasi-flat bands

TL;DR: Wang et al. as mentioned in this paper revealed that penta-CN 2 has superior stability with an ultrahigh melting point up to 2500 K, and it remains an amorphous C-N network under the melting state.
Posted Content

Prediction of group IV-V hexagonal binary monolayers: electronic, optical, thermoelectric, and photocatalysis properties

TL;DR: In this article, the authors systematically predict and investigate eight counterparts of Sn2Bi, namely Si2P, Si2As, SiSb, SiBi, SiY and Si2Sb.
Proceedings ArticleDOI

Graphene on different substrates for sensing applications

TL;DR: In this paper, a comparison between the sensing behavior of MLG grown on different substrates has been carried out in the light of charge carrier transport properties and molecular doping, and the results indicate that, in epitaxial multilayer graphene (MLG) grown on C-face SiC, p-type charge carriers are dominant and in Si-face few layer graphene (FLG), charge carriers were mostly n-type.
Journal ArticleDOI

Finite Element Simulation of the Thermo-mechanical Response of Graphene Reinforced Nanocomposites

TL;DR: In this article, a computational finite element model has been developed that accounts for both the reinforcement and the matrix material phases of a nanocomposite, respectively, for the simulation of the three different material phases, i.e., the matrix, the intermediate transition phase and the reinforcement.
References
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Journal ArticleDOI

Two-dimensional gas of massless Dirac fermions in graphene

TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Journal ArticleDOI

Raman spectrum of graphene and graphene layers.

TL;DR: This work shows that graphene's electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers, and allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.
Journal ArticleDOI

Experimental observation of the quantum Hall effect and Berry's phase in graphene

TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal Article

Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

TL;DR: An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.
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