Patent
Method for Manufacturing a Semiconductor Device
Hiroko Abe,Mikio Yukawa,Ryoji Nomura,Shunpei Semiconductor En. Lab. Co. Ltd. Yamazaki,Yukie Nemoto +4 more
TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.Abstract:
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layerread more
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Patent
Organic light emitting display apparatus
Byoung-Duk Lee,Jong-hyuk Lee,Yoon-Hyeung Cho,Min-Ho Oh,So-Young Lee,Sun-young Lee,Won-jong Kim,Yong-Tak Kim,Jin-Baek Choi +8 more
TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent
Method for manufacturing semiconductor device and laser irradiation apparatus
Koichiro Tanaka,Hirotada Oishi +1 more
TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
Patent
Display apparatus with function which makes gradiation control easier
TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
References
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Patent
Method for manufacturing a conductor layer in a semiconductor device
TL;DR: In this paper, a method for manufacturing a conductor layer in a semiconductor device is achieved with a reduced resistivity in the conductor layer, where a polycide film comprised of a polysilicon film and a tungsten silicide film is manufactured.
Journal ArticleDOI
In situ study of ion beam induced Si crystallization from a silicide interface
TL;DR: In this paper, the ion beam induced epitaxial crystallization (IBIEC) of Si was studied at the a-Si/NiSi 2 precipitate interface and showed that Si crystallization is then Ni silicide-mediated, leading to planar growth.
Patent
Thin film transistor
TL;DR: In this paper, a conductive layer 15' is formed through an insulating film 12 on a glass-like substrate, a polycrystalline Si active layer is formed thereon, further forming a thin insulating films and a conductiv electrode thereon to use the both electrodes as a common gate, and forming a channel in the polycrystaline Si an active layer.
Patent
Polycrystalline silicon thin film and transistor using the same
TL;DR: In this article, a polycrystalline silicon thin film with a large crystal grain size is formed on a substrate, other than single crystalline silicon, e.g. on a glass substrate with a low strain point, by plasma CVD or photo CVD.
Patent
Forming method for silicon thin film for thin film transistor
TL;DR: In this paper, a silicon thin film transistor is used to obtain a high carrier mobility and capable of controlling a threshold voltage to a low value by discharging in inert gas added with hydrogen gas of specific molar % to generate ions.