Patent
Method for Manufacturing a Semiconductor Device
Hiroko Abe,Mikio Yukawa,Ryoji Nomura,Shunpei Semiconductor En. Lab. Co. Ltd. Yamazaki,Yukie Nemoto +4 more
TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.Abstract:
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layerread more
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Patent
Organic light emitting display apparatus
Byoung-Duk Lee,Jong-hyuk Lee,Yoon-Hyeung Cho,Min-Ho Oh,So-Young Lee,Sun-young Lee,Won-jong Kim,Yong-Tak Kim,Jin-Baek Choi +8 more
TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent
Method for manufacturing semiconductor device and laser irradiation apparatus
Koichiro Tanaka,Hirotada Oishi +1 more
TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
Patent
Display apparatus with function which makes gradiation control easier
TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
References
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Patent
Manufacturing method of semiconductor device
TL;DR: In this article, a manufacturing method of a semiconductor device consisting of a process for forming an element separation region 20 on the semiconductor layer 10, a polysilicon layer on the entire surfaces of a first resistor formation region 200R, a second resistor formation 300R, and a first-conductivity type transistor formation region 100P is presented.
Patent
Method for manufacturing semiconductor device
TL;DR: In this article, a method for manufacturing semiconductor devices by which the effective resist thickness formed in a lower level can be easily controlled, without introducing multiple dummy wafers in a lot aside from wafer for formation of devices.
Patent
Method involving pulsed light processing of semiconductor devices
TL;DR: In this article, a short duration pulse of light for thermal processing of selected regions of a semiconductor device is generated by a pulsed laser or flash lamp, which irradiates selected surface regions of the device to be processed.
Patent
MIS semiconductor device and method of fabricating the same
TL;DR: In this paper, a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconducting thin film, provisions are made so that laser or equivalent high-intensity light is radiated also onto the boundaries between the doped region and their adjacent active region, and the laser-or equivalent high intensity light is radiiated from above to accomplish activation.
Patent
Semiconductor device and method of fabricating the same
TL;DR: In this paper, a semiconductor device including a substrate formed thereon with at least one recessed portion, an electrically conductive layer covering at least a surface of the recessed part, and a ball-bump formed on the electricallyconductive layer within the recised portion is presented.