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Patent

Method for Manufacturing a Semiconductor Device

Hiroko Abe, +4 more
TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.
Abstract: 
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer

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Patent

Organic light emitting display apparatus

Byoung-Duk Lee, +8 more
TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
Patent

Method for Manufacturing Semiconductor Device

Hidekazu Miyairi, +3 more
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent

Method of Manufacturing a Semiconductor Device

Masaaki Hiroki, +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent

Method for manufacturing semiconductor device and laser irradiation apparatus

Koichiro Tanaka, +1 more
TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
Patent

Display apparatus with function which makes gradiation control easier

Yukihiro Noguchi
TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
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Patent

Method of making MOS VLSI semiconductor device with metal gate

Robert H. Havemann
TL;DR: In this article, a method of fabricating a transistor on a wafer is described, which consists of forming an oxide layer 40 on a doped silicon layer 32, depositing a first resist over the oxide 40 and patterning the resist with a gate oxide configuration having a predetermined gate oxide length.
Patent

Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization

Shunpei Yamazaki, +5 more
TL;DR: In this paper, the concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced, and a thermal oxide film is formed in this step.
Patent

Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device

Shunpei Yamazaki, +4 more
TL;DR: In this article, a method for manufacturing a thin-film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate, forming a base film over the peeloff layer; forming a plurality of thin film integrated circuits over the base film; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel off layer.
Patent

Method of fabricating a thin film transistor

Hongyong Zhang, +1 more
TL;DR: In this paper, an amorphous silicon film is formed on the nickel film and heated to crystallize it, which is irradiated with infrared light to anneal it.
Patent

MOS type field effect transistor formed on a semiconductor layer on an insulator substrate

Yasuo C, +3 more
TL;DR: In this article, a SOI-MOSFET formed on a thin semiconductor layer having a thickness not more than 1500A includes a charge carrier absorbing region (9a, 9b, 9c) contacting with at least a portion of the bottom of a channel region (6) of a first conductivity type and with at most part of a source region (7, 7a, 7b, 7c) of the second conductivity types.