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Patent

Method for Manufacturing a Semiconductor Device

Hiroko Abe, +4 more
TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.
Abstract: 
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer

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Patent

Organic light emitting display apparatus

Byoung-Duk Lee, +8 more
TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
Patent

Method for Manufacturing Semiconductor Device

Hidekazu Miyairi, +3 more
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent

Method of Manufacturing a Semiconductor Device

Masaaki Hiroki, +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent

Method for manufacturing semiconductor device and laser irradiation apparatus

Koichiro Tanaka, +1 more
TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
Patent

Display apparatus with function which makes gradiation control easier

Yukihiro Noguchi
TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
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Patent

Transparent conductive film and method for manufacturing the same

Osamu Nakagawara, +2 more
TL;DR: In this article, a transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions.
Patent

Semiconductor device and method for manufacturing the same, and electric device

Hideaki Kuwabara, +1 more
TL;DR: In this article, a plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to reduce a partial depression and also to ensure contact resistance.
Patent

Method of fabricating oxide semiconductor device

Nobuyuki Kaji, +1 more
TL;DR: In this article, a method for fabricating a device using an oxide semiconductor, including a process of forming the oxide on a substrate and changing the conductivity of the oxide by irradiating a predetermined region thereof with an energy ray, is presented.
Patent

Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device

Yoshihiro Ito, +1 more
TL;DR: In this article, an n-type contact layer is formed by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrate.
Patent

Article having transparent conductive oxide thin film and its production

Kiyoshi Morita, +7 more
TL;DR: In this paper, an oxide expressed by the general formula of ZnxMyInzO(x+3y/2+3z/2) is used as a target to form an oxide film by sputtering or laser ablation method under the conditions of from room temp. to 300 deg.C substrate temp. and 1×10-2 to 10 (Pa) pressure.