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Patent

Method for Manufacturing a Semiconductor Device

TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.
Abstract
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer

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Citations
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Organic light emitting display apparatus

TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
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Method for Manufacturing Semiconductor Device

TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
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Method of Manufacturing a Semiconductor Device

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TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
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Display apparatus with function which makes gradiation control easier

TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
References
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Journal ArticleDOI

Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

TL;DR: In this paper, a bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TFT) have been constructed using pulsed laser deposition at 450 °C at an oxygen pressure of 3 m Torr, and the material that was formed had a background carrier concentration of less than 5×1016 cm−3.
Patent

Semiconductor device, and manufacturing method thereof

TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Journal ArticleDOI

Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

TL;DR: In this paper, the authors reported high performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration.
Book

Silicides for VLSI applications

TL;DR: This paper presents a meta-analysis of the physical properties of the Higgs boson gas molecule and its application in integrated circuit fabrication.
Patent

Field-effect transistor

TL;DR: In this paper, a field-effect transistor with an active layer and a gate insulating film is presented, where the active layer includes an amorphous oxide layer and the gate insulator.