Patent
Method for Manufacturing a Semiconductor Device
Hiroko Abe,Mikio Yukawa,Ryoji Nomura,Shunpei Semiconductor En. Lab. Co. Ltd. Yamazaki,Yukie Nemoto +4 more
TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.Abstract:
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layerread more
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Patent
Organic light emitting display apparatus
Byoung-Duk Lee,Jong-hyuk Lee,Yoon-Hyeung Cho,Min-Ho Oh,So-Young Lee,Sun-young Lee,Won-jong Kim,Yong-Tak Kim,Jin-Baek Choi +8 more
TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent
Method for manufacturing semiconductor device and laser irradiation apparatus
Koichiro Tanaka,Hirotada Oishi +1 more
TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
Patent
Display apparatus with function which makes gradiation control easier
TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
References
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Patent
Methods of making displays
Steven D. Thelss,Paul F. Baude,Michael A. Haase,Eric W. Hemmesch,Yaoqi J. Liu,Sergey S. Lamansky +5 more
TL;DR: In this article, the authors describe a display with zinc oxide row and column drivers integrated onto the same display substrate as zinc oxide pixel transistors and organic light emitting diodes.
Patent
Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
TL;DR: In this article, a thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer on the other face of channel layer was presented.
Patent
Method of forming a solution processed device
TL;DR: In this paper, a method for depositing a first material over at least a portion of a substrate (102) by use of one or more solution processes to form a first-material layer (108), including inorganic dielectric material, was proposed.
Journal ArticleDOI
Observation of blue phases in chiral networks
TL;DR: In this article, the first observation of cholesteric blue phases in chiral anisotropic polymer networks was reported, in which two-component mixtures of a chiral and a non-chiral diacrylate were photopolymerized at constant temperature.
Journal ArticleDOI
Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation with Ultraviolet Lamp
TL;DR: In this paper, structural changes in sol-gel films with photo-irradiation were investigated using zinc oxide (ZnO) derived from zinc acetate, and the exposure of the films to an ultraviolet lamp induced hexagonal ZnO crystals in a relatively dense amorphous structure.