Patent
Method for Manufacturing a Semiconductor Device
Hiroko Abe,Mikio Yukawa,Ryoji Nomura,Shunpei Semiconductor En. Lab. Co. Ltd. Yamazaki,Yukie Nemoto +4 more
TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.Abstract:
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layerread more
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Patent
Organic light emitting display apparatus
Byoung-Duk Lee,Jong-hyuk Lee,Yoon-Hyeung Cho,Min-Ho Oh,So-Young Lee,Sun-young Lee,Won-jong Kim,Yong-Tak Kim,Jin-Baek Choi +8 more
TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent
Method for manufacturing semiconductor device and laser irradiation apparatus
Koichiro Tanaka,Hirotada Oishi +1 more
TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
Patent
Display apparatus with function which makes gradiation control easier
TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
References
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Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent
Semiconductor device method for producing the same and liquid crystal display including the same
TL;DR: In this article, a liquid crystal display device including a display section including a liquid-crystal layer, pixel electrodes located in a matrix on one of the pair of substrates, a plurality of first thin film transistors respectively connected to the plurality of pixel electrodes, and a peripheral driving circuit located for driving the display section, the peripheral drive circuit being located on the substrate on which the first thin-film transistors are located and having a second thin film transistor.
Patent
Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
Hongyong Zhang,Satoshi Teramoto +1 more
TL;DR: In this article, an amorphous silicon film is formed on the nickel film and heated to crystallize it, which is irradiated with infrared light to anneal it.
Patent
Semiconductor device and method of fabricating same
TL;DR: In this paper, the TFTs are fabricated using an active layer crystallized by making use of nickel, and the gate electrodes are comprising tantalum, and a heat treatment is performed to getter nickel element in the active layer and to drive it into the source/drain regions.
Journal ArticleDOI
Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs
TL;DR: A low-temperature process developed for fabrication of high-mobility polycrystalline silicon thin-film transistors (poly-Si TFTs) is discussed in this article.