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Patent

Method for Manufacturing a Semiconductor Device

Hiroko Abe, +4 more
TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.
Abstract: 
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer

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Patent

Organic light emitting display apparatus

Byoung-Duk Lee, +8 more
TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
Patent

Method for Manufacturing Semiconductor Device

Hidekazu Miyairi, +3 more
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent

Method of Manufacturing a Semiconductor Device

Masaaki Hiroki, +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent

Method for manufacturing semiconductor device and laser irradiation apparatus

Koichiro Tanaka, +1 more
TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
Patent

Display apparatus with function which makes gradiation control easier

Yukihiro Noguchi
TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
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Patent

Semiconductor device having El layer and sealing material

Shunpei Yamazaki
TL;DR: In this paper, a semiconductor film is formed through a sputtering method, and then, the semiconductor material is crystallized, and a patterning step is carried out to form an active layer with a desired shape.
Patent

Method of etching polysilicon using a thin oxide mask formed on the polysilicon while doping

Suguru Tabara
TL;DR: In this article, a polysilicon layer is deposited on a gate insulating film covering the surface of a semiconductor substrate, and then the poly-silicon layers are subjected to an impurity doping process in an oxidization atmosphere with heating, to reduce the resistance of the poly silicon layer, and to oxidize the surface surface of poly-Silicon layer and form a silicon oxide film.
Patent

Plasma-etching method

Kawamoto Hideaki
TL;DR: In this article, the problem of simultaneously etching an organic antireflection film and an oxide film, and preventing a pattern shift was addressed by using a patterned mask.
Patent

Manufacturing device for polycrystalline semiconductor film

Takashi Fujimura, +2 more
TL;DR: In this paper, a beam annealing device for polycrystalline semiconductor films is proposed, whereby a highly reliable transistor free of characteristic variations can be obtained by preventing inclusion of impurities to a poly-crystallineme semiconductor film and reducing projection of a grain part of polycrystaline silicon.
Patent

Composite comprising array of acicular crystal, process for producing the same, photoelectric conversion element, luminescent element, and capacitor

Junji c, +1 more
TL;DR: In this article, a composite consisting of a substrate and an array of acicular crystal formed on the surface of the substrate is presented, where, regarding the array, the substrate side and the opposite side can be well separated from each other.